An integrated optical link in 140 nm SOI technology

Dutta, Satadal; Hueting, R.J.E.; Agarwal, Vishal; Annema, Anne-Johan

doi:10.1364/cleo_at.2016.jw2a.132

Cited by 11 publications

(20 citation statements)

References 7 publications

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“…This work successfully demonstrates a low power wide spectrum optical transmitter in CMOS technologies that can be integrated with standard Si detectors. It further reinforces the promise of enabling AMLEDs as light sources for Si CMOS technology for monolithic integration of optocouplers in CMOS [5,10,11,22]. …”

Section: Resultssupporting

confidence: 58%

“…Avalanche mode light emitting diodes (AMLEDs) are fast with reported small signal modulation speed in the range of tens of GHz [6]. An AMLED as a light source in a CMOS integrated optocoupler has also been proposed [5,[7][8][9][10]. The coupling efficiency between the AMLED and an Si PD has been reported to be higher as compared to the same LED in forward mode of operation [10,11].…”

Section: Introductionmentioning

confidence: 99%

“…An AMLED as a light source in a CMOS integrated optocoupler has also been proposed [5,[7][8][9][10]. The coupling efficiency between the AMLED and an Si PD has been reported to be higher as compared to the same LED in forward mode of operation [10,11]. This is because of the stronger overlap between the emission spectrum of Si AMLEDs and the spectral responsivity of Si PDs [7].…”

Section: Introductionmentioning

confidence: 99%

“…However, optoelectronic properties of AMLEDs are sensitive to process, voltage and temperature (PVT) variations [12]. Together with their steep current-voltage (IV ) curve at relatively high voltages, this easily results in high power consumption, and significant heating [10,11] which are bottlenecks to implement power efficient On-Off Keying (OOK) LED driver circuits in optocoupling applications. In this work, we introduce an AMLED driver circuit to solve these issues, enabling low power Si integrated optical transmitters.…”

Section: Introductionmentioning

confidence: 99%

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Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology

Agarwal¹,

Dutta²,

Annema³

et al. 2017

Opt. Express

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This paper presents a low power monolithically integrated optical transmitter with avalanche mode light emitting diodes in a 140 nm silicon-on-insulator CMOS technology. Avalanche mode LEDs in silicon exhibit wide-spectrum electroluminescence (400 nm < λ < 850 nm), which has a significant overlap with the responsivity of silicon photodiodes. This enables monolithic CMOS integration of optocouplers, for e.g. smart power applications requiring high data rate communication with a large galvanic isolation. To ensure a certain minimum number of photons per data pulse (or per bit), light emitting diode drivers must be robust against process, operating conditions and temperature variations of the light emitting diode. Combined with the avalanche mode light emitting diode's steep current-voltage curve at relatively high breakdown voltages, this conventionally results in high power consumption and significant heating. The presented transmitter circuit is intrinsically robust against these issues, thereby enabling low power operation.

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Section: Resultssupporting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology

Agarwal¹,

Dutta²,

Annema³

et al. 2017

Opt. Express

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“…This paper is an extension of a recent conference contribution [27] and is outlined as follows. Section 2 presents the design and layout of our optical link.…”

Section: Introductionmentioning

confidence: 99%

Monolithic optical link in silicon-on-insulator CMOS technology

et al. 2017

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Abstract:This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n + p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.

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