1988
DOI: 10.1016/0250-6874(88)80043-x
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An integrated low-power thin-film CO gas sensor on silicon

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Cited by 129 publications
(38 citation statements)
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“…At the present time, many efforts are focused on silicon microsensors as chemical sensors, which consist basically in a layer of a gas sensitive material, some electrodes, a heater element and a silicon-based micromachined substrate. These sensors have some advantages such as very small dimensions, low weight, low manufacturing cost, pulsed or modulated mode of operation of the heater element, they have the possibility of being integrated together with other devices and, if the fabrication process is CMOS based they can also take advantage of the integrated circuits (IC) microtechnology [1].…”
Section: Introductionmentioning
confidence: 99%
“…At the present time, many efforts are focused on silicon microsensors as chemical sensors, which consist basically in a layer of a gas sensitive material, some electrodes, a heater element and a silicon-based micromachined substrate. These sensors have some advantages such as very small dimensions, low weight, low manufacturing cost, pulsed or modulated mode of operation of the heater element, they have the possibility of being integrated together with other devices and, if the fabrication process is CMOS based they can also take advantage of the integrated circuits (IC) microtechnology [1].…”
Section: Introductionmentioning
confidence: 99%
“…These devices are typically operated at 350 C to 400 C. At the beginning, closed membranes were realized. Sometimes a heatspreader was integrated beneath the functional materials and structures [5]- [12]. Later, suspended membranes were fabricated [12]- [18].…”
mentioning
confidence: 99%
“…Gardner et al (1995) have designed sensors using composite structures with a platinum resistive heater embedded in low stress silicon nitride with electrodes exposed for metal oxide deposition. Other sensors based on nitride or oxy-nitride, membranes including micro-calorimeters have been reported (Dibbern 1990;Demarne et al 1991;Krebs et al 1993;Gall 1993;Zanini et al 1995). Although these sensors have shown exceptional thermal stability as well as the durability to withstand thermal cycling, the process is not fully CMOS compatible, and so suffers from a higher cost to produce and does not present the possibility of circuit integration.…”
Section: Introductionmentioning
confidence: 97%