An integrated gate driver in 4H-SiC for power converter applications

Ericson, M.N.; Frank, S.S.; Britton, C.L.; Marlino, Laura D.; Janke, Devon; Ezell, Dianne; Ryu, Sei‐Hyung; Lamichhane, Ranjan; Francis, A. Matthew; Shepherd, Paul; Glover, Michael D.; Mantooth, H. Alan; Whitaker, Bret; Cole, Zach; Passmore, Brandon; McNutt, Ty

doi:10.1109/wipda.2014.6964626

Cited by 8 publications

(3 citation statements)

References 5 publications

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“…The simplified driver architecture is shown in Fig. 2 and is the second generation of a previously reported gate driver [7]. The input uses four inverter stages (X 1 -X 4 ) to amplify the 5V logic-level input signal to sufficient levels for the output stage buffers (X 5 and X 6 ).…”

Section: A Sic Gate Drivermentioning

confidence: 99%

High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

Whitaker

Cole

Passmore

et al. 2014

2014 IEEE Workshop on Wide Bandgap Power Devices and Applications

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This paper presents the testing results of an allsilicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The hightemperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes highfrequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter's switching frequency was then increased to 500 kHz to prove the high-frequency capability of the power module. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

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Section: A Sic Gate Drivermentioning

confidence: 99%

High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

Whitaker

Cole

Passmore

et al. 2014

2014 IEEE Workshop on Wide Bandgap Power Devices and Applications

Self Cite

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“…[9] The next big step in SiC technology came in the mid-2010s with the introduction of SiC gate drivers which were developed to successfully operate at 300 degrees Celsius. [10] The feature size was reduced to 2µm a vertical MOSFET structure was developed and accommodated the integration of a few lowvoltage NMOS devices, resistors, and capacitors on chip. [10] A major breakthrough in integration of Power FETs with gate drivers monolithically in SiC came in 2021 with the development of a vertical Power IC which consisted of a vertical Power MOSFET and a CMOS gate buffer on the same die.…”

Section: Introductionmentioning

confidence: 99%

“…[10] The feature size was reduced to 2µm a vertical MOSFET structure was developed and accommodated the integration of a few lowvoltage NMOS devices, resistors, and capacitors on chip. [10] A major breakthrough in integration of Power FETs with gate drivers monolithically in SiC came in 2021 with the development of a vertical Power IC which consisted of a vertical Power MOSFET and a CMOS gate buffer on the same die. [11] However, as mentioned previously, a vertical structure is not suitable for switching power converter applications [15] and hence, a new technology is needed.…”

Section: Introductionmentioning

confidence: 99%

A 400V Buck Converter Integrated with Gate- Drivers and Low-Voltage Control in a 25V- 600V Mixed-Mode SiC CMOS Technology

Gupta

Zhang

Liu

et al. 2023

Preprint

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This paper offers the first demonstration of the design and layout of a fully integrated power converter in a monolithic Silicon Carbide (SiC) technology. A 400V Buck Converter integrated with Gate-Drivers and Low-Voltage Control circuitry in a 25V-600V Mixed-Mode SiC CMOS technology has been presented in this paper. A new SiC technology has been developed for this design which has a feature size of 1µm. This technology allows integration of High-Voltage Power FETs and Low-Voltage CMOS circuits on the same die with a common substrate. Both high-side and low-side Power FETs are N-type hence a bootstrap circuit is used, and the gate drivers use an isolated capacitive level shifter to translate the signals from the 25V domain to the 400V domain which is the input voltage of the Buck Converter. The load current is 1A and the nominal output voltage is 100V thereby meaning that the output power is 100W. The switching frequency is up to 1MHz, and the duty cycle can range from 10% to 90% signifying a wide range of operation of the converter.

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A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology

Gupta,

Zhang,

Liu

et al. 2024

Analog Integr Circ Sig Process

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An integrated gate driver in 4H-SiC for power converter applications

Cited by 8 publications

References 5 publications

High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

A 400V Buck Converter Integrated with Gate- Drivers and Low-Voltage Control in a 25V- 600V Mixed-Mode SiC CMOS Technology

A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology

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