An integrated broadband spectrometer on thin-film lithium niobate

Pohl, David; Escalé, Marc Reig; Madi, Mohammad; Kaufmann, Fabian; Brotzer, Peter; Sergeyev, Anton; Guldimann, Benedikt; Giaccari, Philippe; Alberti, E.; Meier, U.; Grange, Rachel

doi:10.1038/s41566-019-0529-9

Cited by 142 publications

(97 citation statements)

References 38 publications

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“…[13][14][15][16][17] However, till now, only HZO-based gate stack 2D NC-FETs can obtain ultralow SS (<10 mV dec −1 ) and quasi-free hysteresis simultaneously. [14] As a ferroelectric materials system with excellent ferroelectric and electro-optic properties, single crystal LiNbO 3 (LNO) has attracted huge attention, [25][26][27][28] which shows the largest spontaneous polarization (50-80 µC cm −2 ) and possesses unique ferroelectric domains direction with only the +c and the −c. Recently, owing to full-fledged preparation of high-quality single crystal LNO thin film by ion-implanted method, the CMOS-compatible LNO integrated system is realized and becomes a promising candidate for future electronic and optical integrated chips.…”

Section: Doi: 101002/adma202005353mentioning

confidence: 99%

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

et al. 2020

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Power consumption is one of the most challenging bottlenecks for complementary metal‐oxide–semiconductor integration. Negative‐capacitance field‐effect transistors (NC‐FETs) offer a promising platform to break the thermionic limit defined by the Boltzmann tyranny and architect energy‐efficient devices. However, it is a great challenge to achieving ultralow‐subthreshold‐swing (SS) (10 mV dec−1) and small‐hysteresis NC‐FETs simultaneously at room temperature, which has only been reported using the hafnium zirconium oxide system. Here, based on a ferroelectric LiNbO3 thin film with great spontaneous polarization, an ultralow‐SS NC‐FET with small hysteresis is designed. The LiNbO3 NC‐FET platform exhibits a record‐low SS of 4.97 mV dec−1 with great repeatability due to the superior capacitance matching characteristic as evidenced by the negative differential resistance phenomenon. By modulating the structure and operating parameters (such as channel length (Lch), drain–sourse bias (Vds), and gate bias (Vg)) of devices, an optimized SS from ≈40 to ≈10 mV dec−1 and hysteresis from ≈900 to ≈60 mV are achieved simultaneously. The results provide a new potential method for future highly integrated electronic and optical integrated energy‐efficient devices.

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Section: Doi: 101002/adma202005353mentioning

confidence: 99%

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

et al. 2020

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“…[ 1–4 ] Currently, rapid development of footprint shrinking is available for microspectrometer chips through the instrumentality of sophisticated light splitting techniques [ 5–9 ] such as quantum dot filters [ 10 ] or photonic structures. [ 11–14 ] In such devices, the primary shortcoming lies in key sensor performance metrics, including sensitivity and resolution, scale inversely with the effective optical path length, and light–matter interaction volume. [ 3,15–17 ] As a consequence, simple size down‐scaling of conventional spectroscopic sensor designs makes it against the urgent need of on‐chip probing and characterizing a small amount of light emission, such as measuring photoluminescence (PL), Raman analysis, and single particle scattering.…”

Section: Introductionmentioning

confidence: 99%

On‐Chip Measurement of Photoluminescence with High Sensitivity Monolithic Spectrometer

Zheng

Wang

et al. 2020

Advanced Optical Materials

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Monolithic spectrometer is exceptionally attractive to enable compact, low‐cost spectroscopy for portable sensing and lab‐on‐a‐chip functionality. Unfortunately, simple down‐scaling of the microspectrometer size to the chip‐scale severely weakens light–matter interactions and degrades the sensor performance to unacceptable level. Unlike other state‐of‐the‐art miniature spectral splitting filters or photonic structures, bandgap‐graded nanowire strongly enhances the light‐matter interaction, which is a highly demanded yet unfulfilled feature for high‐precision on‐chip sensing. Here, on‐chip measurement of photoluminescence by a monolithic spectrometer made of a single composition‐graded CdSxSe1–x nanowire is reported. The nanowire is engineered to a waveguide‐mode‐operated, dispersive photodiode array. It works as a monolithic spectrometer chip with strong light–matter interaction and superior noise figure. On‐chip measurement of single‐point photoluminescence signals with 1013 Jones room‐temperature detectivity and 5 nm spectral resolution is illustrated. This demonstration of a compact, low‐cost, and high‐performance miniature spectrometer marks a major step towards on‐chip spectroscopy for fine resolution and sensitive detection.

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“…Extending the sampling length of the interferogram linearly increases the resolution. [171] As a result, this technique can achieve wavelength resolutions down to the picometer level. [110] There is an interest in optical spectrometers operating in the mid-infrared spectral range because of their unique ability to monitor the main absorption fingerprints of various chemical and biological substances.…”

Section: Space-time Comodulated On-chip Static Ftssmentioning

confidence: 99%

Research Progress on On‐Chip Fourier Transform Spectrometer

Zhang

Chen

et al. 2021

Laser & Photonics Reviews

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A Fourier transform spectrometer (FTS) is recognized as a highly precise analytical instrument for analyzing the constituent elements of matter in the fields of physics, chemistry, aerospace, and so on. With the emergence and development of miniaturized and portable devices in numerous scientific and technological fields, there has been an urgent need for on-chip FTSs due to their benefits of small size, portability, low energy consumption, and robustness. However, the small size of on-chip FTSs hinders the acquisition of a large optical path difference, resulting in a low resolution of the spectrometer. In addition, the sampler spacing is not sufficiently small to satisfy Nyquist's sampling theorem, directly influencing the bandwidth of the spectrometer. Therefore, studies have been performed to investigate the trade-off between the reduced size and performance of spectrometers. This paper aims to systematically review the progress in on-chip FTSs, especially in on-chip static FTSs, including spatially modulated, temporally modulated, and space-time comodulated FTSs, from the aspects of theories, implementations, and performance indicators. Finally, the paper ends with a discussion of the challenges and a view of the prospective development of this exciting field.

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An integrated broadband spectrometer on thin-film lithium niobate

Cited by 142 publications

References 38 publications

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

On‐Chip Measurement of Photoluminescence with High Sensitivity Monolithic Spectrometer

Research Progress on On‐Chip Fourier Transform Spectrometer

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