An integrated ASV frequency tripler for millimeter-wave applications

Krach, M.; Freyer, J.; Claassen, Manfred

doi:10.1109/eumc.2003.177720

Cited by 3 publications

(4 citation statements)

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“…For example, heterostructure barrier varactor (HBV) diodes based on InAlAs/InP materials have been used to achieve frequency multiplication in the 100-500 GHz frequency band [26]- [28]. Also, a group in Germany has recently developed a tripler circuit with excellent performance using nonuniform doping profiles and a blocking barrier contact [29]. …”

Section: Terahertz Diode and Circuit Fabrication Technologymentioning

confidence: 99%

Opening the terahertz window with integrated diode circuits

Crowe

Bishop

Porterfield

et al. 2005

IEEE J. Solid-State Circuits

265

105

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The terahertz region of the electromagnetic spectrum, spanning from 100 GHz through 10 THz, is of increasing importance for a wide range of scientific, military and commercial applications. This interest is spurred by the unique properties of this spectral band and the very recent development of convenient terahertz sources and detectors. However, the terahertz band is also extremely challenging, in large part because it spans the transition from traditional electronics to photonics. This paper reviews the importance of this frequency band and summarizes the efforts of scientists and engineers to span the "terahertz technology gap." The emphasis is on solid-state circuits that use nonlinear diodes to translate the functionality of microwave technology to much higher frequencies.

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Section: Terahertz Diode and Circuit Fabrication Technologymentioning

confidence: 99%

Opening the terahertz window with integrated diode circuits

Crowe

Bishop

Porterfield

et al. 2005

IEEE J. Solid-State Circuits

265

105

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“…If, however, the real rf-circuit including the split waveguide mount, the waveguide-stripline transitions, the low pass filter and the parasitic elements of the varactor encapsulation is taken into account, the theoretical and experimental results fit very well, as can be seen in Fig. 32 [45].…”

Section: Asvmentioning

confidence: 53%

“…The contact on the substrate side is accomplished as large area n + -contact. The contact area underneath the airbridge must be small to achieve low parasitic elements [37]. In the case of the ASV, principally the structure can be realised in two different ways for a monolithic integration on the substrate material:…”

Section: Series Resistancementioning

confidence: 99%

Power generation at millimetre‐wave frequencies using GaAs/GaAlAs triplers

Krach

Freyer

Claassen

2004

phys. stat. sol. (c)

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In this project, two frequency tripler concepts for the generation of output power in the millimetre-wave range up to 230 GHz have been investigated. Both concepts make use of the advantages of symmetrical devices, whereby the first is based on a HBV (Hetero-Barrier Varactor) monolithically integrated into the rf-circuit on GaAs-substrate whereas the second one uses an ASV (Anti-serial Schottky Varactor) as nonlinear device, realised by quasi-monolithic integration on quartz-substrate. By the help of a theoretical model of both structures, design and optimisation criteria for the varactors and the tripler circuits have been deduced and verified experimentally. The results lead to an output power of 10 mW at a frequency of 210 GHz with a conversion efficiency of 13.5 % for the HBV and an output power of 15 mW at 228 GHz with a conversion efficiency of 22 % for the ASV frequency tripler.

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“…Another technique to build devices that exhibit internal symmetries was explored by Krach [53]. It gave a conversion efficiency of 22% for a 230-GHz planar diode tripler.…”

Section: Frequency Up-conversion Of Microwaves In Solid-state Diodesmentioning

confidence: 99%

Terahertz Frequency Metrology for Spectroscopic Applications: a Review

Consolino

Bartalini

Natale

2017

J Infrared Milli Terahz Waves

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We provide an overview on terahertz (THz) frequency metrology, starting from the nowadays available continuous wave THz sources, discussing their main features such as tunability, spectral purity, and frequency referencing to the primary frequency standards. A comparison on the achieved results in high-precision molecular spectroscopy is given and discussed, and finally, a special emphasis poses on the future developments of this upcoming field.

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An integrated ASV frequency tripler for millimeter-wave applications

Cited by 3 publications

References 0 publications

Opening the terahertz window with integrated diode circuits

Opening the terahertz window with integrated diode circuits

Power generation at millimetre‐wave frequencies using GaAs/GaAlAs triplers

Terahertz Frequency Metrology for Spectroscopic Applications: a Review

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