An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage

Tsai, Jung‐Hui; Lour, Wen‐Shiung; Chao, Yi-Ting; Ye, Sheng-Shiun; Ma, Yung-Chun; Jhou, Jia-Cing; Wu, You-Ren; Ou-Yang, Jhih-Jhong

doi:10.1016/j.tsf.2011.12.081

Cited by 6 publications

(1 citation statement)

References 9 publications

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“…Compared with the homojunction, by changing the band gap and carrier transmission via structural design, it is possible to improve the properties of a semiconductor device. In 2012, Tsai et al proposed an InP/InGaAs heterojunction transistor, achieving a direct current (DC) voltage gain ( β ) of 255 [ 1 ]. In 2013, Narang et al fabricated a Ga 0.5 In 0.5 P/GaAs heterojunction transistor to realize a DC voltage gain ( β ) of 100–120 [ 2 ].…”

Section: Introductionmentioning

confidence: 99%

Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

Zhao

Wen

2017

Sensors

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This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HSMST) chips were designed and fabricated on a p-type <100> orientation double-side polished silicon wafer with high resistivity. In addition, a collector load resistor (RnormalL) was integrated on the chip, and the resistor converted the collector current (InormalC) to a collector output voltage (Vout). When InormalB = 8.0 mA, VDD = 10.0 V, and RnormalL = 4.1 kΩ, the magnetic sensitivity (SnormalV) at room temperature and temperature coefficient (αnormalC) of the collector current for HSMST were 181 mV/T and −0.11%/°C, respectively. The experimental results show that the magnetic sensitivity and temperature characteristics of the proposed transistor can be obviously improved by the use of a nc-Si:H/c-Si heterojunction as an emitter junction.

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Section: Introductionmentioning

confidence: 99%

Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

Zhao

Wen

2017

Sensors

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Integrated magnetic-sensitive differential circuit based on heterojunction silicon magnetic-sensitive transistor

Zhao

Wen

et al. 2017

Sensors and Actuators A: Physical

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Electrical determination of the bandgap energies of the emitter and base regions of bipolar junction transistors

Mimila-Arroyo

2016

Journal of Applied Physics

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An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage

Cited by 6 publications

References 9 publications

Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

Integrated magnetic-sensitive differential circuit based on heterojunction silicon magnetic-sensitive transistor

Electrical determination of the bandgap energies of the emitter and base regions of bipolar junction transistors

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