Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

Abstract

This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HSMST) chips were designed and fabricated on a p-type <100> orientation double-side polished silicon wafer with high resistivity. In addition, a collector load resistor (RnormalL) was integrated on the chip, and the resistor converted the collector current (InormalC) to a collector output voltage (Vout). When InormalB = 8.0 mA, VDD = 10.0 V, and RnormalL = 4.1 kΩ, the magnetic sensitivity (SnormalV) at room temperature and temperature coefficient (αnormalC) of the collector current for HSMST were 181 mV/T and −0.11%/°C, respectively. The experimental results show that the magnetic sensitivity and temperature characteristics of the proposed transistor can be obviously improved by the use of a nc-Si:H/c-Si heterojunction as an emitter junction.

Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors

“…At present, magnetic field sensors include the Hall element, giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), magnetic sensitive diodes (MSD), silicon magnetic sensitive transistors (SMST), and so on [ 1 , 2 , 3 , 4 ]. With the development of microelectromechanical systems (MEMS) technology, magnetic field sensors have achieved a three-dimensional structure, miniaturization and integration and have a wide range of applications, such as industrial, military, aerospace and other areas [ 5 , 6 , 7 , 8 ].…”

Two-Dimensional Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors with Differential Structure

“…[ 1 , 2 , 3 ]. To date, the widely used magnetic sensitivity sensors include Hall sensor, giant magnetoresistance (GMR), magnetic sensitive transistor, and so on [ 4 , 5 , 6 ]. In 2003, the silicon magnetic sensitive transistor (SMST) with a cubic structure was fabricated by MEMS technology [ 7 , 8 ], achieving a maximum relative magnetic sensitivity of about 22.7%/kG.…”