An industrial perspective of technology CAD for advanced CMOS technologies

Bold, B.S.

doi:10.1016/s0167-9317(96)00023-8

Cited by 4 publications

(2 citation statements)

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“…Technology computer aided design (TCAD) is computer aided design and engineering used in semiconductor fabrication process design and optimization [1][2][3][4]. TCAD includes detailed simulation of all fabrication process steps.…”

Section: Introductionmentioning

confidence: 99%

A three-dimensional photoresist etching simulator for TCAD

Karafyllidis

1999

Modelling Simul. Mater. Sci. Eng.

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Cellular Automata have been extensively used as a two-dimensional simulator of the photoresist etching process. This simulator has been verified experimentally for 248 nm photolithography. In this work the Cellular Automata simulator is extended in three dimensions in order to deal with problems arising in 193 nm photolithography and beyond. The three-dimensional simulator is tested using well known etch-rate distribution functions and its results are compared with experimental results found in the literature.

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Section: Introductionmentioning

confidence: 99%

A three-dimensional photoresist etching simulator for TCAD

Karafyllidis

1999

Modelling Simul. Mater. Sci. Eng.

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“…Technology computer aided design (TCAD) is computer aided design and engineering used in semiconductor fabrication process design and manufacturing yield optimization [1][2][3][4]. TCAD includes detailed simulation of all fabrication process steps [5,6], and it is essential for the successful design of today's devices and integrated circuits because of their increasing complexity and the increasing cost and delay of experimental design iteration [7].…”

Section: Introductionmentioning

confidence: 99%

Simulation of deposition-topography granular distortion for TCAD

Karafyllidis

Georgoulas

Hagouel

et al. 1998

Modelling Simul. Mater. Sci. Eng.

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A new deposition simulator for technology computer aided design (TCAD) is presented in this paper. The solution, on a cellular automaton lattice, of the equations that describe the deposition process has enabled the proposed simulator to handle the complicated boundary and initial conditions imposed by granular defects. This simulator can provide scanning electron microscope (SEM)-like cross-sectional views that are in very good agreement with experimental and simulation results found in the literature, and it can also be used to perform numerical experiments. The effects of granule temperature, location, and size on the deposition profiles have been studied by performing numerical experiments using this simulator.

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