An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect

Wang, Daming; Liang, Shiwei; Deng, Linfeng; Yin, Xin; Shen, Z. John

doi:10.1109/tpel.2018.2871594

Cited by 9 publications

(17 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results of the simulations [31], [32] indicate that the model match well with the measurements for both devices, representing the expected differences in the transient currents. Fig.…”

Section: Experimental Set-upsupporting

confidence: 56%

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Shen

Jahdi

Yang

et al. 2022

IEEE Open J. Ind. Electron. Soc.

View full text Add to dashboard Cite

The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV and high operating temperatures. In this paper, the advantages of the 4H-SiC NPN BJTs in terms of switching transients and current gain over their silicon counterparts is illustrated by means of extensive experimental measurements and modelling, including investigation of high level injection, as a common phenomenon in bipolar devices that influences the switching rates and DC current gain. The two device types have been tested at 800 V with maximum temperature of 175°C and maximum collector current of 8 A. The turn-ON and turn-OFF transition in Silicon BJT is seen to be much slower than that of the SiC BJT while the transient duration will increase with increasing temperature and decreases with larger collector currents. The common-emitter current gain of SiC BJT is also found to be much higher than silicon counterparts, increasing with temperature in low injection levels but decreasing in higher injection levels in both devices. The rate of increase of current gain slows down toward stability as the collector current increases, known as the high-level injection. Current sharing imbalance among parallel connected devices is also investigated, which are shown to be evidently dependant on temperature and base resistance in Silicon BJT, while the current collapse in also seen in SiC BJT at high injection levels with high base resistance. The turn-OFF delay is seen to be temperature dependant in single and paralleled Silicon BJTs while almost non-existent in SiC device.

show abstract

“…The results of the simulations [31], [32] indicate that the model match well with the measurements for both devices, representing the expected differences in the transient currents. Fig.…”

Section: Experimental Set-upsupporting

confidence: 56%

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Shen

Jahdi

Yang

et al. 2022

IEEE Open J. Ind. Electron. Soc.

View full text Add to dashboard Cite

show abstract

“…where M JE and V JE are the model parameters to be extracted and the model parameter C JE0 is directly obtained from the measured data as 4.23665E-12F. From (17), it can be seen that the C JE -V BE curve is a nonlinear function and the extraction of M JE and V JE parameters is a nonlinear fitting problem. In this paper, the optimization method shown in Figure 4 is used to extract the model parameters M JE and V JE .…”

Section: Parasitic Capacitance Parametersmentioning

confidence: 99%

“…[11][12][13][14] Petrosyants et al 15 investigated control methods for test environments under high and low temperatures. The model for predicting the fall time was improved in Vijayalakshmi et al 16 In Wang et al, 17 the impact of composite effects under high temperature and high current on current gain was studied. Zillmann and Herzel 18 investigated the influence of thermal noise on the model.…”

Section: Introductionmentioning

confidence: 99%

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Pan,

Zhang,

Ren

et al. 2023

Circuit Theory & Apps

View full text Add to dashboard Cite

SummaryBipolar junction transistors (BJTs) are widely used in various electronic systems, and the establishment of the electromagnetic compatibility (EMC) model for BJTs is crucial for EMC analysis of these systems, such as high‐frequency circuits. In this paper, a BJT EMC model that satisfies both functionality and EMC analysis requirements was established based on physical characteristic measurement. First, comprehensive and systematic methods for measurement and extracting SPICE parameters based on physical BJTs are presented, including a proposed curve‐fitting calculation method for extracting barrier capacitance parameters. Second, an analysis of the impact of major BJT electrical characteristics parameters was conducted, leading to the identification of important model parameters affecting BJT functionality and EMC. Finally, the primary BJT model was optimized using the simplex method, and a method for EMC analysis and verification of the BJT model was presented. The experimental and simulation results are in good agreement, and the established model meets the accuracy requirements for both EMC and functionality. Therefore, the proposed method is feasible and suitable for the EMC modeling of BJTs.

show abstract

“…The equations of the model have also been presented below [2]. For more advanced diode models, the reader may refer to recent literature [3,4].…”

Section: Effect Of Non-linearities and Parasitic Elementsmentioning

confidence: 99%

Power Converters Electromagnetic Emissions with Methods to Measure, Compare and Reduce Noise Fields

Nath¹

2022

Recent Topics in Electromagnetic Compatibility

View full text Add to dashboard Cite

Power electronic converters find widespread applications in the present times. However, they have been known to be rich sources of electromagnetic emissions. The converters are required to operate in compliance with their electromagnetic environment, for which they must adhere to emission limits imposed by the standards. The power converters are duly tested, and their emission levels are measured and checked for compliance. Therefore, understanding the emission mechanism is necessary to design a power converter that will satisfy the EMC requirements. In addition to the switches, parasitic elements, which are invariably present in every circuit, play a crucial role, especially in the higher frequency range, in degrading the EMC performance of converters. The present chapter takes up these aspects and discusses the reasons behind emissions and the roles played by switch characteristics and parasitic elements. Demonstrations through simulations and computations are presented all along with the discussions, and inferences are accordingly drawn. Finally, the standard specifications for emission measurements and analysis through measuring EMI receiver are briefly introduced. A few popular methods to reduce emissions are demonstrated. The final improvement in the EMI performance is shown with the help of EMI receiver output, in accordance with the CISPR standards.

show abstract

An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect

Cited by 9 publications

References 22 publications

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Power Converters Electromagnetic Emissions with Methods to Measure, Compare and Reduce Noise Fields

Contact Info

Product

Resources

About