An Improved Room-Temperature Silicon Terahertz Photodetector on Sapphire Substrates*

Lu, Xuehui; Jing, Chengbin; Wang, Lian-Wei; Chu, Junhao

doi:10.1088/0256-307x/36/9/098501

Cited by 5 publications

(4 citation statements)

References 32 publications

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“…Therefore, the carrier concentration of the Ta 2 NiSe 5 changes, causing a change in conductivity. 30,31 When a bias voltage is applied across the device, the modulated incident THz will be detected.…”

Section: Resultsmentioning

confidence: 99%

“…In the following half period, the injected electrons in the Ta 2 NiSe 5 are decelerated but further move forward. , As a result, the emitted electrons accumulate in the Ta 2 NiSe 5 . Therefore, the carrier concentration of the Ta 2 NiSe 5 changes, causing a change in conductivity. , When a bias voltage is applied across the device, the modulated incident THz will be detected.…”

Section: Resultsmentioning

confidence: 99%

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Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta₂NiSe₅

Mao

et al. 2022

ACS Appl. Electron. Mater.

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Terahertz technologies are of great significance in a wide range of applications, such as astronomy, medicine, communications and nondestructive material characterization. However, the energy of terahertz photons is so small that it is difficult to detect directly at room temperature. Two-dimensional (2D) materials with excellent optoelectronic properties provide opportunities for the development of terahertz photodetectors. Herein, we develop a high-performance terahertz photodetector with a metal−semiconductor−metal structure via a Ta 2 NiSe 5 nanosheet. The photodetector shows an excellent responsivity of 1350 A W −1 and an extremely low noise equivalent power of 0.01 pW Hz −0.5 with a fast response of ∼550 ns at room temperature. Electromagnetic induced well theory is utilized to explain the highly sensitive terahertz photoelectric response. In addition, long-term stability over 6 months is realized for the detector. The terahertz imaging experiments demonstrate the excellent performance of the detector and potential applications. The results suggest that our strategy can be a strong candidate for high-performance terahertz photodetection systems.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta₂NiSe₅

Mao

et al. 2022

ACS Appl. Electron. Mater.

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“…The nonlinear current will form a voltage drop Δ U between the drain and source electrodes to realize optical detection due to the nonlinearity of the channel and the applied asymmetrical boundary conditions. , Additionally, the photothermoelectric (PTE) effect, which is based on the Seebeck effect, , provides a temperature difference Δ T through asymmetric electrode following terahertz radiation to realize photodetection. However, as compared to conventional bulk materials, , 2D materials have lower optical absorption due to the nanoscale thickness, resulting in decreased quantum efficiency. Consequently, enhancing photon energy coupling to the active region is critical for improving the performance of the detector for THz detection.…”

Section: Introductionmentioning

confidence: 99%

High Performance of Room-Temperature NbSe₂ Terahertz Photoelectric Detector

Jiang

et al. 2022

ACS Appl. Mater. Interfaces

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Photoelectric detection is developing rapidly from ultraviolet to infrared band. However, terahertz (THz) photodetection approaches is constrained by the bandgap, dark current, and absorption ability. In this work, room-temperature photoelectric detection is extended to the THz range implemented in a planar metal−NbSe 2 −metal structure based on an electromagnetic induced well (EIW) theory, exhibiting an excellent broadband responsivity of 5.2 × 10 7 V W −1 at 0.027 THz, 7.8 × 10 6 V W −1 at 0.173 THz, and 9.6 × 10 5 V W −1 at 0.259 THz. Simultaneously, the NbSe 2 photoelectric detector (PD) with ultrafast response speed (∼610 ns) and ultralow equivalent noise power (4.6 × 10 −14 W Hz −1/2 ) in the THz region is realized, enabling highresolution imaging. The figure of merit (FOM) characterizing the detection performance of the device is 2 orders of magnitude superior to that of the reported THz PDs based 2D materials. Furthermore, the THz response speed is 2 orders of magnitude faster than that of the visible due to the different response mechanisms of the device. Our results exhibit promising potential to achieve highly sensitive and ultrafast photoelectric detection.

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“…[14,15] However, atomically thin 2D materials have low light absorption leading to a low-quantum efficiency compared to conventional bulk materials. [16,17] To that end, artificial microstructure designs are particularly important for THz photodetectors to couple the incident photons into the small photoactive area and thus realize the performance-enhancement. [18][19][20] Bi 2 O 2 Se, as a novel quasi-2D material, has exhibited some unique advantages over other available 2D materials, such as narrow-bandgap (0.8 eV), high carrier mobility (≈450 cm 2 V −1 s −1 at room temperature, ≈2.8 × 10 5 cm 2 V −1 s −1 at 2 K), high conductivity and ambient stability, [21,22] all of which play important roles in IR and THz photodetection.…”

Section: Introductionmentioning

confidence: 99%

Broadband Bi₂O₂Se Photodetectors from Infrared to Terahertz

Chen

Tan

et al. 2021

Adv Funct Materials

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2D Bi 2 O 2 Se has shown great potential in photodetector from visible to infrared (IR) owing to its high mobility, ambient stability, and layer-tunable bandgaps. However, for the terahertz (THz) band with longer wavelength and richer spectral information, there are few reports on the research of THz detection based on 2D materials. Herein, an antenna-assisted Bi 2 O 2 Se photodetector is constructed to achieve broadband photodetection from IR to THz ranges driven by multi-mechanism of electromagnetic waves to electrical conversion. The good tradeoff between the bandgap and high mobility results in a broad spectral detection. In the IR region, the nonequilibrium carriers result from photo-induced electron-hole pairs in the Bi 2 O 2 Se body. While in the THz region, the carriers are caused by the injected electrons from the metal electrodes by the electromagnetic-induced well. The Bi 2 O 2 Se photodetector achieves a broadband responsivity of 58 A W-1 at 1550 nm, 2.7 × 10 4 V W-1 at 0.17 THz, and 1.9 × 10 8 V W-1 at 0.029 THz, respectively. Surprisingly, an ultrafast response time of 476 ns and a quite low noise equivalent power of 0.2 pW Hz-1/2 are acquired at room temperature. Our researches exhibit promising prospects of Bi 2 O 2 Se in broadband detection, THz imaging, and ultrafast sensing.

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An Improved Room-Temperature Silicon Terahertz Photodetector on Sapphire Substrates*

Cited by 5 publications

References 32 publications

Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta₂NiSe₅

Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta₂NiSe₅

High Performance of Room-Temperature NbSe₂ Terahertz Photoelectric Detector

Broadband Bi₂O₂Se Photodetectors from Infrared to Terahertz

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An Improved Room-Temperature Silicon Terahertz Photodetector on Sapphire Substrates*

Cited by 5 publications

References 32 publications

Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta2NiSe5

Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta2NiSe5

High Performance of Room-Temperature NbSe2 Terahertz Photoelectric Detector

Broadband Bi2O2Se Photodetectors from Infrared to Terahertz

Contact Info

Product

Resources

About

Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta₂NiSe₅

Detection of Long Wavelength Photons via Quasi-Two-Dimensional Ternary Ta₂NiSe₅

High Performance of Room-Temperature NbSe₂ Terahertz Photoelectric Detector

Broadband Bi₂O₂Se Photodetectors from Infrared to Terahertz