An Improved Pulse Density Modulator in Inductive Power Transfer System

Wu, Dong; Zhou, Wei; Liu, Yeran; Peng, Fan; Zhao, Shiqiao; Zhou, Qichen

doi:10.1109/tpel.2021.3135281

Cited by 4 publications

(2 citation statements)

References 23 publications

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“…The reverse breakdown voltage was obtained from the standard definition of reverse current reaching 1 mA.cm 2 . The on-resistance was calculated from the slope dV/dI of the I-V characteristics 8,26 and corrected for the resistance of the external circuit (cables, chuck and probe), which was 10 Ω. The on-resistance values were calculated assuming the current spreading length is 10 um and a 45°spreading angle.…”

Section: (Bottom)mentioning

confidence: 99%

“…[11][12][13] A promising recent development has been the use of NiO as a p-type conducting layer to produce p-n heterojunctions with the n-type Ga 2 O 3 . [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] This to some extent mitigates the lack of a native p-type doping capability for Ga 2 O 3 . There remain many challenges, including optimizing edge termination, and managing heat dissipation, which will be needed if adequate device reliability is to be achieved.…”

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confidence: 99%

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1 mm², 3.6 kV, 4.8 A NiO/Ga₂O₃ Heterojunction Rectifiers

Chiang

Xia

et al. 2023

ECS J. Solid State Sci. Technol.

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Large area (1 mm2) vertical NiO/β n-Ga2O/n+ Ga2O3 heterojunction rectifiers are demonstrated with simultaneous high breakdown voltage and large conducting currents. The devices showed breakdown voltages (VB) of 3.6 kV for a drift layer doping of 8 x 1015 cm-3, with 4.8 A forward current. This performance is higher than the unipolar 1D limit for GaN, showing the promise of β-Ga2O3 for future generations of high-power rectification devices. The breakdown voltage was a strong function of drift region carrier concentration, with VB dropping to 1.76 kV for epi layer doping of 2 x 1016 cm-3. The power figure-of-merit, VB2/RON, was 8.64 GW·cm-2, where RON is the on-state resistance (1.5 mΩ.cm2). The on-off ratio switching from 12 to 0 V was 2.8 x 1013, while it was 2 x 1012 switching from 100 V. The turn-on voltage was 1.8 V. The reverse recovery time was 42 ns, with a reverse recovery current of 34 mA.

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Section: (Bottom)mentioning

confidence: 99%

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confidence: 99%

1 mm², 3.6 kV, 4.8 A NiO/Ga₂O₃ Heterojunction Rectifiers

Chiang

Xia

et al. 2023

ECS J. Solid State Sci. Technol.

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A self-oscillating series-none inductive power transfer system using a matrix converter

2023

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Power density and conversion efficiency are two critical parameters of inductive power transfer (IPT) systems. These parameters are related to the number of components in the power conversion circuit as well as its modulation method. The combination of Midpoint Matrix Converter and pulse-density modulation (PDM) has a potential to improve these parameters, due to a low number of semiconductor switches utilization as well as constant efficiency at the maximum output and partial load operations . In this context, this paper analyzes the performance of a three-phase to single-phase Midpoint Matrix Converter using a Free-wheeling Switch (MMCFS) and the PDM in a high coupling factor series-none IPT application. This converter utilizes on–off control to manage power transfer, which automatically tracks the load resonant frequency. Dynamic and steady-state mathematical equations were derived to represent the converter and the IPT system characteristics. These equations show a relationship between the link efficiency, the link gain, the damping ratio and the coupling factor. A kick-start method and a multistep switching strategy were developed to start and operate the converter, respectively. Additionally, a 150 W MMCFS-based IPT prototype was built to verify the improvement, which demonstrated an efficiency of around 80% at the maximum output and partial load operations.

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Fuzzy Logic Controlled Pulse Density Modulation Technique for Bidirectional Inductive Power Transfer Systems

Venkatesan,

Narayanamoorthi,

Emara

et al. 2024

IEEE Access

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An Improved Pulse Density Modulator in Inductive Power Transfer System

Cited by 4 publications

References 23 publications

1 mm², 3.6 kV, 4.8 A NiO/Ga₂O₃ Heterojunction Rectifiers

1 mm², 3.6 kV, 4.8 A NiO/Ga₂O₃ Heterojunction Rectifiers

A self-oscillating series-none inductive power transfer system using a matrix converter

Fuzzy Logic Controlled Pulse Density Modulation Technique for Bidirectional Inductive Power Transfer Systems

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An Improved Pulse Density Modulator in Inductive Power Transfer System

Cited by 4 publications

References 23 publications

1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers

1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers

A self-oscillating series-none inductive power transfer system using a matrix converter

Fuzzy Logic Controlled Pulse Density Modulation Technique for Bidirectional Inductive Power Transfer Systems

Contact Info

Product

Resources

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1 mm², 3.6 kV, 4.8 A NiO/Ga₂O₃ Heterojunction Rectifiers

1 mm², 3.6 kV, 4.8 A NiO/Ga₂O₃ Heterojunction Rectifiers