An Improved Method of Determining Deep Impurity Levels and Profiles in Semiconductors

Goto, G.; Yanagisawa, S.; Wada, Osamu; Takanashi, H.

doi:10.1143/jjap.13.1127

Cited by 36 publications

(7 citation statements)

References 1 publication

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“…The transient measured in such systems is the voltage. 46,47 Designing such a feedback system with unconditional stability is far from trivial and often results in a degradation of response time and noise performance.…”

Section: E High Trap Concentrations and Constant Capacitance Dltsmentioning

confidence: 99%

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Peaker

Markevich

Coutinho

2018

Journal of Applied Physics

107

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The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy and scanning DLTS. For the study of minority carrier related processes and wide gap materials we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS (ODLTS and DLOS) together with some of their many variants. Capacitance, current and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects, the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN and ZnO.

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Section: E High Trap Concentrations and Constant Capacitance Dltsmentioning

confidence: 99%

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Peaker

Markevich

Coutinho

2018

Journal of Applied Physics

107

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“…2(a 19) is a method to measure the capacitance transient at constant voltage and is analyzed using an approximation under the condition that the trap density is less than the carrier density. On the other hand, CC-DLTS [20][21][22] is a method to measure voltage transients with constant capacitance and can be analyzed even if the trap concentration is larger than the carrier density. The concentration−depth profiles of S, Se, and Zn obtained by SIMS (Fig.…”

Section: Resultsmentioning

confidence: 99%

Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit

Ban¹,

Kato²,

Iizuka³

et al. 2023

Jpn. J. Appl. Phys.

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To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, have been introduced into Si wafers. Group II impurity Zn and group VI impurities S and Se, which are known to form deep levels, were introduced into the Si substrates by ion implantation. These samples were analyzed for concentration-depth profiles, energy level depths, and absence of defects. To introduce deep impurities into thin channels such as 50-nm-thick Si, we found impurity introduction conditions so that the concentration depth profiles have maximum value at less than 50 nm from the Si surface. Then, the formation of the deep levels and absence of defects were experimentally examined. By using the conditions to introduce deep impurities into Si wafer obtained from the experiments, single-electron transport at room temperature, high-temperature operation of qubit, and room-temperature quantum magnetic sensors are promising.

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“…The dependence of nT(t) that is necessary for determining a capture time constant and, consequently, a capture cross-section, is directly obtained from measurements of the dependence of capacitance on time or from the dependence of reverse-bias voltage on time during measurements by the constant-capacitance method [12].…”

Section: Methodsmentioning

confidence: 99%

Influence of a Strong Electric Field on the Carrier Capture by Nonradiative Deep‐Level Centers in GaAs

Prinz

Rechkunov

1983

Physica Status Solidi (b)

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The techniques of capacitance spectroscopy are used to measure directly electron and hole capture cross-sections of deep levels in a neutral material at zero electric field and in the depletion layer with a strong electric field. The data show that if at zero electric field the electron capture crosssections onto the centers are thermally activated and described by the theory of nonradiative multiphonon capture, then in a strong electric field (P z lo4 V/cm) the capture cross-sections increase to the limiting large value (a Y lOV14 to 10-12 cmz) and are only little dependent on temperature. It is shown that an electric field causes a simultaneous increase of the electron and hole capture cross-sections of the level EL2 by five orders of magnitude at low temperatures (27 Y Y 90 K).

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An Improved Method of Determining Deep Impurity Levels and Profiles in Semiconductors

Cited by 36 publications

References 1 publication

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit

Influence of a Strong Electric Field on the Carrier Capture by Nonradiative Deep‐Level Centers in GaAs

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