An Improved Formula for Estimating Stored Energy in a BAW Resonator by its Measured S11 Parameters

Jin, Renfeng; Cao, Zhong; Patel, Misaal; Abbott, Ben; Molinero, David; Feld, David A.

doi:10.1109/ius52206.2021.9593620

Cited by 10 publications

(2 citation statements)

References 5 publications

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“…The coefficient factor (k eff 2 ) and Q of device 1 and device 2 are calculated using the following equations [36]:…”

Section: Resultsmentioning

confidence: 99%

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

Wang,

Gao,

Yang

et al. 2024

Phys. Scr.

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Thin film bulk acoustic resonator (FBAR) with high quality factor (Q) is preferred for many communication applications. AlN film deposited in conventional FBAR fabrication process is poor, resulting in unsatisfactory device performance. This study demonstrated the comparison of two Si-substrate FBARs, adopting the same AlN deposition process by physical vapor deposition (PVD) method, however using different device fabrication method. Instead of depositing AlN film on Mo/SiO2/Si substrate in existing fabrication process, we deposited AlN directly on Si substrate by PVD to get better crystal quality piezoelectric layer of the FBAR. The full width at half maximum (FWHM) of rocking curve and surface roughness of AlN directly deposited on Si substrate are 1.4° and 1.96 nm, while those of AlN deposited on Mo/SiO2/Si substrate are 8.5° and 5.54 nm, respectively, indicating AlN deposited directly on Si substrate has a better crystal quality than that on Mo/SiO2/Si substrate. The dielectric loss of FBAR using AlN developed on Si substrate decreases from 0.4 Ω to 0.11 Ω leading to the increase of Qm from 470 to 830. By preserving the high quality AlN deposited on Si substate with film transfer method, the FBAR device enjoys an increasing of Q-values as high as 76%.

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“…The coefficient factor (k eff 2 ) and Q of device 1 and device 2 are calculated using the following equations [36]:…”

Section: Resultsmentioning

confidence: 99%

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

Wang,

Gao,

Yang

et al. 2024

Phys. Scr.

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show abstract

“…al. and it is related as follows; 26,27 The electromechanical characteristics extracted from the mBVD model and the Q-factor of HBAR on Si and SiC substrates at the strongest excited resonances using the new Q approach are listed in Table 1. The product of resonance frequency and the measured quality factor (f.Q products) are then determined for the HBAR devices.…”

Section: Resultsmentioning

confidence: 99%

Beyond 5 GHz excitation of a ZnO-based high-overtone bulk acoustic resonator on SiC substrate

Panda

Chatterjee

Tallur

et al. 2023

Preprint

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This work reports on the fabrication and characterization of an Au/ZnO/Pt-based high-overtone bulk acoustic resonator (HBAR) on SiC substrates. We evaluate its microwave characteristics comparing with Si substrates for micro-electromechanical applications. Dielectric magnetron sputtering and an electron beam evaporator are employed to develop highly c-axis-oriented ZnO films and metal electrodes. The crystal structure and surface morphology of post-growth layers are characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) techniques. HBAR on SiC substrate results in multiple longitudinal bulk acoustic wave resonances up to 7 GHz, with the strongest excited resonances emerging at 5.25 GHz. The value of f.Q (Resonance frequency. Quality factor) parameter obtained using a novel Q approach method for HBAR on SiC substrate is 4.1 × 10 13 Hz, which to the best of our knowledge, is the highest among all reported values for specified ZnO-based devices.

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Beyond 5 GHz excitation of a ZnO-based high-overtone bulk acoustic resonator on SiC substrate

Panda

Chatterjee

Tallur

et al. 2023

Sci Rep

View full text Add to dashboard Cite

This work reports on the fabrication and characterization of an Au/ZnO/Pt-based high-overtone bulk acoustic resonator (HBAR) on SiC substrates. We evaluate its microwave characteristics comparing with Si substrates for micro-electromechanical applications. Dielectric magnetron sputtering and an electron beam evaporator are employed to develop highly c-axis-oriented ZnO films and metal electrodes. The crystal structure and surface morphology of post-growth layers are characterized using X-ray diffraction, atomic force microscopy, and scanning electron microscopy techniques. HBAR on SiC substrate results in multiple longitudinal bulk acoustic wave resonances up to 7 GHz, with the strongest excited resonances emerging at 5.25 GHz. The value of f.Q (Resonance frequency.Quality factor) parameter obtained using a novel Q approach method for HBAR on SiC substrate is 4.1 $$\times$$ × 10$$^{13}$$ 13 Hz, which to the best of our knowledge, is the highest among all reported values for specified ZnO-based devices.

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An Improved Formula for Estimating Stored Energy in a BAW Resonator by its Measured S11 Parameters

Cited by 10 publications

References 5 publications

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

High-Q film bulk acoustic resonator with high quality AlN film based on transfer method

Beyond 5 GHz excitation of a ZnO-based high-overtone bulk acoustic resonator on SiC substrate

Beyond 5 GHz excitation of a ZnO-based high-overtone bulk acoustic resonator on SiC substrate

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