An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects

Chen, D.; Kan, Edwin C.; Ravaioli, Umberto; Shu, Chi-Wang; Dutton, R.W.

doi:10.1109/55.144940

Cited by 173 publications

(103 citation statements)

References 8 publications

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“…When the energy band is parabolic, the relation U is given as U = 3 2 nθ, which approximated by Boltzmann statistics. In general, we put β= [5]. For the Chen model, Y. Li and L. Chen [6] have study the asymptotic behavior of global smooth solution to the initial boundary problem in 1-D space.…”

Section: Introductionmentioning

confidence: 99%

Asymptotic Behavior of the Solution to a 3-D Simplified Energy-Transport Model for Semiconductors

Liu¹

2016

JPDE

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Abstract. The well-posedness of smooth solution to a 3-D simplified Energy-Transport model is discussed in this paper. We prove the local existence, uniqueness, and asymptotic behavior of solution to the equations with hybrid cross-diffusion. The smooth solution convergences to a stationary solution with an exponential rate as time tends to infinity when the initial date is a small perturbation of the stationary solution.

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Section: Introductionmentioning

confidence: 99%

Asymptotic Behavior of the Solution to a 3-D Simplified Energy-Transport Model for Semiconductors

Liu¹

2016

JPDE

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“…The HDM has been widely used in the study of aerodynamic flow, and was suggested to study the hot electron transport in mu ltivalley semiconductor devices by Bløtekjaer [29]. Since then, several contributions have been introduced to improve the hot carrier transport models in semiconductors and the HDM in particular [30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47]. For instance, the nonparabolicity of energy bands has been included in the HDM for the first time by Thoma et al [38].…”

Section: Introductionmentioning

confidence: 99%

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

El-Saba¹

2013

MSSE

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In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.

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“…Generalizations of the drift-diffusion equations have been sought which do not suffer from these shortcomings. These models are loosely termed hydrodynamical models, this class comprising also the so-called energy models [13][14][15]. Hydrodynamical models are obtained from the infinite hierarchy of the moment equations of the Boltzmann transport equation using a suitable truncation procedure.…”

Section: Introductionmentioning

confidence: 99%

2D Simulation of a Silicon MESFET with a Nonparabolic Hydrodynamical Model Based on the Maximum Entropy Principle

Romano¹

2002

Journal of Computational Physics

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An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects

Cited by 173 publications

References 8 publications

Asymptotic Behavior of the Solution to a 3-D Simplified Energy-Transport Model for Semiconductors

Asymptotic Behavior of the Solution to a 3-D Simplified Energy-Transport Model for Semiconductors

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

2D Simulation of a Silicon MESFET with a Nonparabolic Hydrodynamical Model Based on the Maximum Entropy Principle

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