An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

Abstract

Cao Meng-Yi(曹梦逸) a) , Lu Yang(卢 阳) a) , Wei Jia-Xing(魏家行) b) , Chen Yong-He(陈永和) a) , Li Wei-Jun(李卫军) b) , Zheng Jia-Xin(郑佳欣) a) , Ma Xiao-Hua(马晓华) a)b) † , and Hao Yue(郝 跃) a) a) Key Laboratory for Wide Band-

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

“…The reason why the resistance R es increases sharply with frequency increasing is the skin-effect of the current, which corresponds to the concentration of current flowing on the surface of the conductor at high frequency. [19] Figure 7(b) shows that the inductance of the gate, drain and source decrease as the frequency increases. The reason is that in the high-frequency skin-effect region, there is a vertical substrate current, which leads the line inductance to decrease.…”

A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

“…The main material growth and device processing has been described in Ref. [11], and several improvements are also processed. First, the thickness of the GaN buffer layer is increased to 2 lm to improve the crystal quality of GaN channel.…”

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

“…The large signal model was established based on the EEHEMT model by IC-CAP software. [14,15] Multistage microstrip is designed in both input and output serving as the 2nd harmonic manipulation network to tune the 2nd harmonic as shown in Fig. 2.…”