An IGCT chip set for 7.2 kV (RMS) VSI application

Nistor, I.; Scheinert, M.; Wikström, T.; Luscher, M.

doi:10.1109/ispsd.2008.4538891

Cited by 9 publications

(1 citation statement)

References 7 publications

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“…Today, the above mentioned high-power silicon-based devices can be designed with good overall performance up to several thousand volts and amperes as single wafer components in the case of PCTs, IGCTs and diodes [2][3][4] or by paralleling devices in a specific package as is the case for IGBT/diode chips [5]. For grid systems operating typically at much higher voltages in the hundreds of kilovolts range, devices are normally connected in series to support the total dc-line voltage.…”

Section: Power Devices and Applicationsmentioning

confidence: 99%

Future trends in high‐power bipolar metal‐oxide semi‐conductor controlled power semi‐conductors

Rahimo¹

2014

IET Circuits, Devices & Systems

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Silicon-based high-power devices continue to play an enabling role in modern high-power systems, especially in the fields of traction, industrial and grid applications. Today, approximately 30 years after its invention, a bipolar-metal-oxide semiconductor controlled switch referred to as the insulated gate bipolar transistor (IGBT) is the device of choice for the majority of power electronics converters with power ratings ranging from few kWs to beyond the 1 GW mark. Following a brief introduction into power devices and applications in general, this paper will provide an overview of the development history and recent advancements of the IGBT. More importantly the future technology trends purely from the device design view point will be discussed including the predicted performance impact such technology platforms will have at the system level especially in the high-power range.

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Section: Power Devices and Applicationsmentioning

confidence: 99%