An extended Doherty amplifier with high efficiency over a wide power range

Iwamoto, M.; Williams, A.; Chen, Pin-Fan; Metzger, A.; Larson, L.E.; Asbeck, P.M.

doi:10.1109/22.971638

Cited by 224 publications

(59 citation statements)

References 9 publications

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“…It can be seen that, for the target power level, GaN technology provides an important benefit, since the Doherty R L results around 50 Ω, while it would be ten times lower in gallium arsenide (GaAs) technology [13][14][15]. This is permitted by the possibility to bias the GaN device at high voltage, thanks to its intrinsic high breakdown voltage (>70 V).…”

Section: Ghz Doherty: Research Foundrymentioning

confidence: 99%

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

2014

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This paper presents the progress of monolithic technology for microwave application, focusing on gallium nitride technology advances in the realization of integrated power amplifiers. Three design examples, developed for microwave backhaul radios, are shown. The first design is a 7 GHz Doherty developed with a research foundry, while the second and the third are a 7 GHz Doherty and a 7-15 GHz dual-band combined power amplifiers, both based on a commercial foundry process. The employed architectures, the main design steps and the pros and cons of using gallium nitride technology are highlighted. The measured performance demonstrates the potentialities of the employed technology, and the progress in the accuracy, reliability and performance of the process.

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Section: Ghz Doherty: Research Foundrymentioning

confidence: 99%

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

2014

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“…3). This situation is analyzed for the ideal DPAs that employ only two ideal amplifiers and a quarter-wave impedance transformer [8].…”

Section: Introductionmentioning

confidence: 99%

Effect of input phase mismatch in Doherty power amplifiers

Aydın

Palamutcuogullari

Yarman

2016

IEICE Electron. Express

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In this paper, a new method is proposed to calculate transconductance ratio of the main and the peaking transistor of a Doherty power amplifier (DPA) which employs output matching circuits and offset lines. Cascade ABCD two-port parameters are used to analyze output section of the DPA. It is shown that output matching circuits has impact on the magnitude and the phase of the transconduction ratio. The effect of the input phase mismatch on the output power and efficiency is analyzed analytically. A 100 W dual drive Gallium Nitride (GaN) Doherty power amplifier is realized to experimentally verify the results. The drain efficiency measured as 68% at the correct phase, 65% for 30°input phase mismatch and 56% for 45°input phase mismatch.

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“…It can be shown that P M,max = P DPA,max / √ OBO; thus, the Main amplifier delivers at maximum 1/4 of the maximum output power, while the remaining 3/4 must be provided by the Auxiliary, which should therefore be at least three-times larger than the Main (assuming Class-C bias and uneven power splitting) [34]. This solution is known as asymmetrical DPA [35][36][37][38]: the higher the level of asymmetry, the wider the HEPR. On the other hand, increasing asymmetry causes a severe gain reduction, due to the stronger influence of the inherently lower gain Class-C Auxiliary stage on the overall performance and to the reduced power delivered to the Main stage.…”

Section: High-efficiency Power Rangementioning

confidence: 99%

High Efficiency Power Amplifiers for Modern Mobile Communications: The Load-Modulation Approach

et al. 2017

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Abstract:Modern mobile communication signals require power amplifiers able to maintain very high efficiency in a wide range of output power levels, which is a major issue for classical power amplifier architectures. Following the load-modulation approach, efficiency enhancement is achieved by dynamically changing the amplifier load impedance as a function of the input power. In this paper, a review of the widely-adopted Doherty power amplifier and of the other load-modulation efficiency enhancement techniques is presented. The main theoretical aspects behind each method are introduced, and the most relevant practical implementations available in recent literature are reported and discussed.

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An extended Doherty amplifier with high efficiency over a wide power range

Cited by 224 publications

References 9 publications

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

Evolution of Monolithic Technology for Wireless Communications: GaN MMIC Power Amplifiers For Microwave Radios

Effect of input phase mismatch in Doherty power amplifiers

High Efficiency Power Amplifiers for Modern Mobile Communications: The Load-Modulation Approach

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