An explicit surface-potential-based MOSFET model for circuit simulation

Langevelde, R. van; Klaassen, F.M.

doi:10.1016/s0038-1101(99)00219-1

Cited by 119 publications

(65 citation statements)

References 15 publications

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“…The most of MOSFET transistor models are based on charge sheet approximation and the incrementally linear relationship between the inversion charge density and the surface potential (van Langevelde & Klaassen, 2000;Chen & Gildenblat, 2001). Their combination gives following implicit relation between the surface potential ψ s and gate voltage V G :…”

Section: Modeling Surface Potential In Mosfet Tran-sistorsmentioning

confidence: 99%

Homotopy perturbations method: Theoretical aspects and applications

Stojanović¹,

Kevkić²

2018

Univ thought Publ nat sci

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The application of the homotopy perturbation method (HPM) in two different research's area has been proposed in this paper. First, the HPM has been used for approximate solving of the well-known implicit equation for electrostatic surface potential of MOSFET transistor. The approximate analytical solution obtained in this case has relative simple mathematical form, and simultaneously high degree of accuracy. Next, HPM has been applied in determination of the invariant measures (IMs) of the non-linear dynamical systems with chaotic behavior. The convergence and efficiency of this method have been confirmed and illustrated in some characteristic examples of chaotic mappings.

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Section: Modeling Surface Potential In Mosfet Tran-sistorsmentioning

confidence: 99%

Homotopy perturbations method: Theoretical aspects and applications

Stojanović¹,

Kevkić²

2018

Univ thought Publ nat sci

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“…The RF MOSFETs also seem to fulfill most of the performance requirements for RF systems with operating frequencies up to 6 GHz [35,36]. The RF CMOS transistors are combination of n-channel MOSFET and p-channel MOSFET.…”

Section: Radio-frequency Mosfetsmentioning

confidence: 99%

Introduction

Srivastava

Singh

2013

Analog Circuits and Signal Processing

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“…is used to calculate the surface potential ψ sL at the internal drain according to [12]. Finally, the drift-and diffusion component of the channel region current is calculated, both in terms of its surface potentials.…”

Section: Model Description Including Quasi-saturationmentioning

confidence: 99%

Compact modeling of high-voltage LDMOS devices including quasi-saturation

Aarts

Kloosterman

2006

IEEE Trans. Electron Devices

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Abstract-The surface-potential-based compact transistor model, MOS Model 20 (MM20), has been extended with quasisaturation, an effect that is typical for LDMOS devices with a long drift region. As a result, MM20 extends its application range from low-voltage LDMOS devices up to high-voltage LDMOS devices of about 100V. In this paper, the new dc model of MM20 including quasi-saturation is presented. The addition of velocity saturation in the drift region ensures the current to be controlled by either the channel region or the drift region. A comparison with dc measurements on a 60V LDMOS device shows that the new model provides an accurate description in all regimes of operation, ranging from sub-threshold to super-threshold, in both the linear and saturation regime. Thus, owing to the inclusion of quasi-saturation also the regime of high gate and high drain bias conditions for high-voltage LDMOS devices is accurately described.

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An explicit surface-potential-based MOSFET model for circuit simulation

Cited by 119 publications

References 15 publications

Homotopy perturbations method: Theoretical aspects and applications

Homotopy perturbations method: Theoretical aspects and applications

Introduction

Compact modeling of high-voltage LDMOS devices including quasi-saturation

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An explicit surface-potential-based MOSFET model for circuit simulation

Cited by 119 publications

References 15 publications

Homotopy perturbations method: Theoretical as­pects and applications

Homotopy perturbations method: Theoretical as­pects and applications

Introduction

Compact modeling of high-voltage LDMOS devices including quasi-saturation

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Product

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Homotopy perturbations method: Theoretical aspects and applications

Homotopy perturbations method: Theoretical aspects and applications