An experimental investigation on the nature of reverse current of silicon power pn-junctions

Characteristics of 6H-silicon carbide PIN diodes prototyping by laser doping

“…At high junction temperatures, the surface depletion layer adjacent to the dielectric layer acts as a shunt for the reverse electrical current, which increases the reverse leakage current significantly. 40 The decrease of resistance in the reverse bias results in the decrease of breakdown voltage at elevated temperatures.…”

Characterizing stress in ultrathin silicon wafers

“…For low reverse bias, the effect of generation current was ignored due to extremely low values. 6 Also, the intrinsic carrier concentration is a function of band gap energy, …”

The Reverse Leakage Current of Present-Day Manufactured Silicon PN Junctions and Their Maximum Permissible Operation Temperature

“…The two dashed lines in Fig.1, correspond to a voltage dependence like V R 1/3 and V R 1/4 . Voltage dependence of I R as V R 1/3 or V R 1/2 has been also found, when the surface component of I R is the dominant one, [2][3]. For fast switching diodes, dominance of the bulk component of I R is possible from room to high junction temperature, [3].…”