An expanding thermal plasma for deposition of surface textured ZnO:Al with focus on thin film solar cell applications

Groenen, R.; Linden, J.L.; Lierop, van Hrm; Schram, DC Daan; Kuypers, A.; Sanden, van de Mcm Richard

doi:10.1016/s0169-4332(00)00875-8

Cited by 59 publications

(16 citation statements)

References 16 publications

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“…11 The plasma source is a wallstabilized cascaded arc. A subatmospheric thermal argon plasma is generated in a current-controlled dc discharge and subsequently expanded into the lowpressure reactor chamber.…”

Section: Methodsmentioning

confidence: 99%

“…9,10 Low-temperature deposition of textured zinc oxide utilizing expanding thermal argon plasma created by a cascaded arc has been demonstrated. 11 It has been shown that high-quality material is obtained, showing excellent performance in thin-film amorphous silicon pin solar cells. [11][12][13] Here, the effect of aluminum doping on the optical and electronic zinc oxide film properties is presented using spectroscopic ellipsometry (SE) in combination with transmission reflection measurements in the visible and NIR ranges.…”

Section: Introductionmentioning

confidence: 99%

“…11 It has been shown that high-quality material is obtained, showing excellent performance in thin-film amorphous silicon pin solar cells. [11][12][13] Here, the effect of aluminum doping on the optical and electronic zinc oxide film properties is presented using spectroscopic ellipsometry (SE) in combination with transmission reflection measurements in the visible and NIR ranges. Spectroscopic ellipsometry has been demonstrated to be a powerful tool for the analysis of transparent conducting oxide film properties.…”

Section: Introductionmentioning

confidence: 99%

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Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping

Groenen

Kieft

Linden³

et al. 2006

J. Electron. Mater.

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Aluminum-doped zinc oxide films exhibiting a rough surface morphology are deposited on glass substrates utilizing expanding thermal plasma. Spectroscopic ellipsometry is used to evaluate optical and electronic film properties. The presence of aluminum donors in doped films is confirmed by a shift in the zinc oxide bandgap energy from 3.32 to 3.65 eV. In combination with transmission reflection measurements in the visible and NIR ranges, charge carrier densities, optical mobilities, and film resistivities have been obtained from the free carrier absorption. Film resistivities are consistent with direct measurements, values as low as 6.0 3 10 ÿ4 V cm have been obtained. The interdependence of electrical conductivity, film composition, and film morphology is addressed.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping

Groenen

Kieft

Linden³

et al. 2006

J. Electron. Mater.

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“…Apart from that, stability in hydrogen plasma ambience, nontoxicity, wide band gap (∼3.3 eV) and high conductivity make it an interesting material to study [6,7]. In addition, the ZnO can be doped with impurities such as Al [7,8] and Ga [9,10] to yield films with good thermal stability and lower resistivity. The extensively researched aluminum doping can be accomplished using sputter * Corresponding author.…”

Section: Introductionmentioning

confidence: 99%

Studies on the effect of hydrogen doping during deposition of Al:ZnO films using RF magnetron sputtering

Shantheyanda¹,

Sundaram²,

Shiradkar³

2012

Materials Science and Engineering: B

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“…Impurity doped ZnO films are attractive TCOs due to their low material cost, non-toxicity and stability under hydrogen plasma together with low resistivity and high visible transmission [2,3]. Most of the related studies have been focused on the Al doped ZnO [4,5] and the Ga doped ZnO films due to their low electrical resistivity [6,7]. Unlike the abundant studies on ZnO films doped with cation dopants such as Al or Ga, only a few investigations in which fluorine was used as anion dopant can be found in literature.…”

Section: Introductionmentioning

confidence: 99%

Effect of fluorine doping on the properties of ZnO films deposited by radio frequency magnetron sputtering

Ku¹,

Kim

Lee

et al. 2008

J Electroceram

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ZnO films with varying fluorine content were prepared on Corning glass by radio frequency magnetron sputtering of ZnO target containing ZnF 2 at room temperature, and the compositional, electrical, optical, and structural properties of the as-grown films together with the vacuum-annealed films were investigated. The fluorine content in the fluorine doped ZnO (FZO) films increased almost linearly with increasing ZnF 2 content in sputter target, and the highest atomic concentration was 7.3%. Vacuum-annealing caused a slight reduction of fluorine content in the films. The resistivity of the as-grown FZO films deposited showed a typical valley-like behavior with respect to the fluorine content in film, i.e. having minimum resistivity at intermediate fluorine content. Despite high fluorine content in the FZO films, the carrier concentration remained below 1.2×10 20 cm −3 , leading to very low doping efficiency level. Upon vacuum-annealing, the resistivity of FZO films decreased substantially due to increase in both the carrier concentration and the Hall mobility. From the structural analysis made by X-ray diffraction study, it was shown that addition of small amount of fluorine enhanced the crystallinity of FZO films with (002) preferred orientation, and that large amount of fluorine addition yielded disruption of preferred orientation. It was also shown that doping of fluorine rendered a beneficial effect in reducing the absorption loss of ZnO films in visible range, thereby substantially enhancing the figure of merit.

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An expanding thermal plasma for deposition of surface textured ZnO:Al with focus on thin film solar cell applications

Cited by 59 publications

References 16 publications

Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping

Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping

Studies on the effect of hydrogen doping during deposition of Al:ZnO films using RF magnetron sputtering

Effect of fluorine doping on the properties of ZnO films deposited by radio frequency magnetron sputtering

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