An examination of correlation between characteristic and device performance of ZnO films as a function of La content

Habashyani, Saman; Özmen, Ahmet; Aydoğan, Ş.; Yılmaz, Mehmet

doi:10.1016/j.vacuum.2018.09.040

Cited by 17 publications

(7 citation statements)

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“…Using the data in Norde plot (Figure 4), the B and Rs for each diode were calculated and given in Table 1. It can be seen from Table 1 that the B values calculated by using traditional TE theory and those by using Norde method are in good agree with both each other and literature [15,21,22]. As the amounts of Er increase, n values for DZEr diodes have increased first, then decreased.…”

Section: I-v Characteristics Of Fabricated P-n Heterojunctionssupporting

confidence: 77%

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

Ilıcan

2019

Eskişehir Technical University Journal of Science and Technology a - Applied Sciences and Engineering

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In this work, Er doped ZnO films and silicon substrates were used as n-type and p-type semiconductors, respectively. In order to obtained p-Si/n-ZnO:Er heterojunction structures, top (aluminum; Al) and bottom (gold; Au) metal contacts were deposited using a evaporator and sputter, respectively. The electrical characterization of these heterojunctions were investigated by current-voltage (I-V) characteristics at room temperature and in dark. It was observed that Au/p-Si/n-ZnO:Er/Al heterojunction structures have rectifying properties. The diode parameters such as barrier height, series resistance and ideality factor were investigated by using I-V measurement data. These parameters were determined by using different methods.

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Section: I-v Characteristics Of Fabricated P-n Heterojunctionssupporting

confidence: 77%

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

Ilıcan

2019

Eskişehir Technical University Journal of Science and Technology a - Applied Sciences and Engineering

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“…The small discrepancy between Φ B values, which obtained by the I–V and Norde method, maybe due to the nonhomogeneity of barrier and the non‐ideal behavior of diodes. [ 45,58 ] As shown in Table 2, a dramatic decrease in the R s values of diodes was observed after the Li doping. The large R s value of heterojunction diodes is often attributed to the resistivity of deposited thin films or the SiO 2 layer on silicon due to exposure to air before coating.…”

Section: Resultsmentioning

confidence: 91%

“…[ 44 ] Also, it is observed that the trend of E g variation is in harmony with the AFM roughness values, which affect the optical properties of films due to light scattering. [ 45 ] The calculation of the Urbach energy ( E u ) of the films can provide information about the structural disorder of the material, inter‐band formation, defects, and variation of E g . [ 45,46 ] The E u values of films can be extracted by the following equation

(α h v) = α_{0} \exp (\frac{h v}{E_{u}})

…”

Section: Resultsmentioning

confidence: 99%

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The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Rüzgar

2020

Physica Status Solidi (a)

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TiO 2 has received intense attention for optoelectronic applications due to its excellent properties, such as non-toxicity, low cost, and simple preparation. Herein, the influence of Li doping both on the structural and optical characteristics of TiO 2 thin films and on optoelectronic properties of TiO 2-based photodiodes is investigated. The root-mean-square (RMS) roughness values obtained from the atomic force microscopy (AFM) results and the optical bandgap energies calculated from the Tauc method vary between 3.40 and 24.53 nm and between 3.58 and 3.75 eV depending on the increase in Li doping, respectively. The ideality factor (n) values of the diodes, which provided information about the performance of diodes, are calculated between 5.92 and 9.74. The lowest n value of 5.92 is obtained for 2% Li-doped diode. All the fabricated diodes demonstrate a good photodiode behavior, and the maximum photoresponsivity value of 6.74 Â 10 À2 A W À1 is obtained for 10% Li:TiO 2. In addition, the C-V, G-V, and R s-V characteristics of diodes are examined for different frequencies. Li doping has improved the optoelectrical performance of the TiO 2-based photodiodes. Thus, the Li:TiO 2-based photodiode can be a candidate for optoelectronic applications.

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“…The metal–semiconductor-rectifying contacts have many advantages such as low turn-on voltage, fast recover time, and high frequency compatibilities [1]. Hence, these devices have wide applications in electronics and optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications

Kaçuş

Şahin

Aydoğan

et al. 2020

Jnl of Sandwich Structures & Materials

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The temperature dependence of the current–voltage and room temperature capacitance–voltage measurements of Co/aniline blue/ n-Si sandwich-type rectifying device was investigated.Furthermore, the effects of the illumination on the current–voltage measurements were tested with 100 mW/cm2 light intensity, and it was seen that Co/aniline blue/ n-Si sandwich-type device showed a clear response to illumination, and it may be a candidate for solar cells or photodiode applications. The rectifying device parameters, such as the barrier height (Ф), the ideality factor ( n), the rectification ratio, and the series resistance ( Rs), were obtained as a function of temperature using thermionic emission, Cheung function, and Norde function. The interface state densities versus energy were obtained. The Richardson constant ( A*) obtained from the In( Io/ T2) versus 1000/ T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height[Formula: see text] and the standard deviation ( σo) were calculated using the apparent Schottky barrier height Фap versus 1/2 kT plot. So, it has been found to be 1.08 eV and 0.15 V (260–460 K) and 0.79 eV and 0.10 V (100–260 K), respectively. The results were discussed based on the presence of two Gaussian distributions of Фb potential in the contact area of Co/aniline blue/ n-Si/Al device.

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An examination of correlation between characteristic and device performance of ZnO films as a function of La content

Cited by 17 publications

References 57 publications

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications

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An examination of correlation between characteristic and device performance of ZnO films as a function of La content

Cited by 17 publications

References 57 publications

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

The Optoelectrical Properties of Li: TiO2/p‐Si Photodiodes for Various Li Doping

Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications

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The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping