An Enhancement Mode MOSFET Based on GaN-on-Silicon Platform for Monolithic OEIC

Yan, Jiabin; Piao, Jinlong; Wang, Yongjin

doi:10.1109/led.2019.2952905

Cited by 16 publications

(6 citation statements)

References 25 publications

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“…Due to the availability of large-sized silicon wafers and good substrate thermal conductivity, low cost and high power density can be expected. Furthermore, high-performance electronic devices 26 – 30 can be fabricated on a GaN-on-silicon platform to monolithically integrate with the photonic integrated circuit (PIC) to yield an optoelectronic integrated chip. Moreover, PICs based on a GaN-on-silicon platform can extend the light wavelength from ultraviolet to the near-infrared to meet the requirement of visible light applications, which is impossible using InP-based photonics integration and monolithic silicon photonics 31 …”

Section: Introductionmentioning

confidence: 99%

Complete active–passive photonic integration based on GaN-on-silicon platform

Yan,

Fang,

Sun

et al. 2023

Adv. Photon. Nexus

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Suitable optoelectronic integration platforms enable the realization of numerous application systems at the chip scale and are highly anticipated in the rapidly growing market. We report a GaN-on-silicon-based photonic integration platform and demonstrate a photonic integrated chip comprising a light source, modulator, photodiode (PD), waveguide, and Y-branch splitter based on this platform. The light source, modulator, and PD adopt the same multiple quantum wells (MQWs) diode structure without encountering incompatibility problems faced in other photonic integration approaches. The waveguide-structure MQW electro-absorption modulator has obvious indirect light modulation capability, and its absorption coefficient changes with the applied bias voltage. The results successfully validate the data transmission and processing using near-ultraviolet light with peak emission wavelength of 386 nm. The proposed complete active-passive approach that has simple fabrication and low cost provides new prospects for next-generation photonic integration.

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Section: Introductionmentioning

confidence: 99%

Complete active–passive photonic integration based on GaN-on-silicon platform

Yan,

Fang,

Sun

et al. 2023

Adv. Photon. Nexus

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“…The strong polarization effect between AlGaN and GaN will confine the electrons at the surface of the GaN channel, thereby forming a 2-dimensional electron gas (2DEG) with high mobility [ 8 , 9 ]. At the same time, GaN-on-silicon is widely used owing to its low cost and large size, which can be integrated with Si-CMOS technology [ 10 , 11 ]. In recent years, there have been an increasing number of reports on high-performance AlGaN/GaN HEMT devices [ 12 , 13 , 14 , 15 , 16 , 17 ], however, there is still a large gap between the limits of GaN material properties and commercial devices.…”

Section: Introductionmentioning

confidence: 99%

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Guo

et al. 2022

Micromachines

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In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer and AlN nucleating layer, which introduces a high electric field from the vertical field plate into the internal buffer region of the device. The compound buffer layer can significantly increase the breakdown performance without sacrificing any dynamic characteristics and increasing the difficulty in the fabrication process. The significant structural parameters are optimized and analyzed. The simulation results reveal that the proposed HEMT with a 6 μm gate-drain distance shows an OFF-state breakdown voltage (BV) of 881 V and a specific ON-state resistance (Ron,sp) of 3.27 mΩ·cm2. When compared with the conventional field plate HEMT and drain connected field plate HEMT, the breakdown voltage could be increased by 148% and 94%, respectively.

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“…To overcome this problem, people have developed a variety of new structures to improve BV [6][7][8][9]. Among them, the proposal of heterojunction structure has attracted much attention, the latest progress in SiC/Si and GaN/Si heterojunctions provides a costeffective platform for the development of power MOSFETs [10][11][12][13][14]. It mainly depends on the high-electric field and wide energy band of the third-generation semiconductor materials SiC, GaN, and mature Si process.…”

Section: Introductionmentioning

confidence: 99%

Novel vertical power MOSFET with partial GaN/Si heterojunction to improve breakdown voltage by breakdown point transfer terminal technology

Wang

Duan

Yang

et al. 2020

Semicond. Sci. Technol.

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In this paper, the vertical power MOSFET with partial GaN/Si heterojunction is proposed, and the partial GaN/Si heterojunction double-diffused MOSFET (partial GaN/Si VDMOS) and U-shaped MOSFET (partial GaN/Si UMOS) are simulated. Thanks to the breakdown point transfer technology, the breakdown point is transferred from the high electric field area to the low electric field area, therefore, the breakdown voltage (BV) is improved. Different types of dangling bonds are introduced to simulate the influence of different interface state densities on the forward characteristics of the device, the proposed structure alleviates the influence of interface state occurring in the whole GaN/Si heterojunction VDMOS and UMOS (GaN/Si VDMOS and GaN/Si UMOS). The results show that the BV and the specific on-resistance of partial GaN/Si VDMOS are 325 V and 10.17 mΩ cm2, and of partial GaN/Si UMOS are 279 V and 2.34 mΩ cm2, all of which break the limit relation of silicon.

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An Enhancement Mode MOSFET Based on GaN-on-Silicon Platform for Monolithic OEIC

Cited by 16 publications

References 25 publications

Complete active–passive photonic integration based on GaN-on-silicon platform

Complete active–passive photonic integration based on GaN-on-silicon platform

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Novel vertical power MOSFET with partial GaN/Si heterojunction to improve breakdown voltage by breakdown point transfer terminal technology

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