An enhancement-mode MOS voltage-controlled linear resistor with large dynamic range

Moon, Gyu; Zaghloul, Mona; Newcomb, R.W.

doi:10.1109/31.103222

Cited by 60 publications

(12 citation statements)

References 7 publications

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“…Many researchers have proposed tunable grounded resistors in JFET/MOSFET technology [1][2][3][4][5][6][7][8][9][10][11][12]. In references [1][2][3][4][5][6][7][8][9][10][11][12], the authors have used additional circuit (either op-amps, resistors or NMOS, PMOS transistors) to cancel the nonlinear-term present in the drain current equation of the JFET/MOSFET operating in the ohmic region. On the other hand, in this paper, a single 3-input FGMOS is used to implement tunable grounded resistor in which one of the input gate voltages has been used to cancel the nonlinearterm present in the drain current equation of FGMOS operating in the ohmic region, thereby simplifying the circuit.…”

Section: Introductionmentioning

confidence: 99%

FGMOS based tunable grounded resistor

Pandey

Gupta

2010

Analog Integr Circ Sig Process

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This paper proposes a novel floating gate MOSFET (FGMOS) based tunable grounded resistor (FGTGR). The FGTGR has been implemented using a single 3-input FGMOS. In the drain current equation of 3-input FGMOS, the gate voltage is equal to the weightedsum of the 3 input voltages, namely V in (input voltage), V C (control voltage), and V b (bias voltage). The input gate voltage (V in ) with appropriate conditions has been used to cancel the nonlinear-term present in the drain current equation of FGMOS operating in the ohmic region. The control voltage V C has been used to control the resistor value and the bias voltage V b has been used to realize either a threshold-dependent or a threshold-independent FGTGR. The FGTGR is simple, compact, accurate, and with low power dissipation of 1.63 lW. The workability of the FGTGR and the high pass filter realized by using the same, have been confirmed by SPICE simulations in 0.5 lm CMOS technology.

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Section: Introductionmentioning

confidence: 99%

FGMOS based tunable grounded resistor

Pandey

Gupta

2010

Analog Integr Circ Sig Process

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“…Trofimenkoff and Smallwood (1977), Nay and Budak (1983) employed drain-gate feedback and the controlled source technology to achieve the higher dynamic range. There were many variable resistor realizations (Babanezhad and Temes 1984, Han and Park 1984, Edward 1986, Moon et al 1990, Kobayashi et al 1991 based upon the parallel connection of two MOS transistors. They were used to mutually compensate the parabolic non-linearities by gate biasing.…”

Section: Introductionmentioning

confidence: 99%

Voltage-controlled isolated linear resistors with wide operation range

Hou

Lin

2005

International Journal of Electronics

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In this paper, cadmium sulfur (CdS) type photo-couplers are employed to achieve the voltage-controlled isolated resistors (VCIRs). The feedback technique is applied to overcome the inherent non-linear characteristics of photo-couplers using current conveyors, and thus a good transient response of VCIRs can be obtained. They can be employed to achieve noise suppression and high voltage isolation since the circuit has no common ground between the input and output terminals. Their resistances are proportional to the controlled voltage and range from 400 to 400 k. The mathematical model is also proposed. Experimental responses and simulation results demonstrate the dynamic and static characteristics of VCIRs.

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“…It is seen from (5) that the resistance will be controlled by V,. If V, << V, then R will be the same value as in [ 5 ] . To achieve a small value of V, , V, can be set to a value to offset V,.…”

Section: Fig 2 the Basic Cellmentioning

confidence: 87%

“…M1 and M3 operate in the saturated region. A42 and M4 operate in the linear region.The combination of a linear and saturated transistor allow for an almost linear current[5]. Transistors M1, M 2 and M3, M4 seen inFig;.3 generate currents 1, and I2 as seen inFig.…”

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confidence: 96%

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CMOS analog implementation of cellular neural network to solve partial differential equations with a microelectromechanical thermal interface

Rasmussen

Zaghloul

Proceedings of 40th Midwest Symposium on Circuits and Systems. Dedicated to the Memory of Professor Mac Van Valkenburg

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A cellular neural network for solving a class of partial differential equations is presented. Each neural cell consists of a novel floating variable linear resistor, an amplifier, and a passive capacitor. The output of each cell is integrated with a Micro Electromechanical (MEMS) heater device that will be used for a thermal interface. The CMOS VLSI implementation of a nine cell network was designed and simulated. The results of this network are compared to the numerical solution of the partial differential equations.

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An enhancement-mode MOS voltage-controlled linear resistor with large dynamic range

Cited by 60 publications

References 7 publications

FGMOS based tunable grounded resistor

FGMOS based tunable grounded resistor

Voltage-controlled isolated linear resistors with wide operation range

CMOS analog implementation of cellular neural network to solve partial differential equations with a microelectromechanical thermal interface

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