An empirical table-based FET model

Angelov, I.; Rorsman, Niklas; Stenarson, J.; Garcı́a, M.; Zirath, Herbert

doi:10.1109/22.808981

Cited by 124 publications

(18 citation statements)

References 18 publications

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“…3 for the intrinsic capacitors and . Concerning the large-signal behavior of the SiC-MESFET, the Angelov model [15], [17] has been found to be a very suitable base. We achieved accurate results for both dc and harmonic-balance simulations with minor changes and extensions of the model equations.…”

Section: Sic Mesfet Modelingmentioning

confidence: 99%

Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

Sayed

Boeck

2005

IEEE Trans. Microwave Theory Techn.

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This paper describes a two-stage 5-W broad-band amplifier covering the frequency range from 10 MHz to 2.4 GHz. An SiC MESFET is used as the power stage. A large-signal table-based model has been developed and verified for the SiC device by comparison with measurements. A novel broad-band choke structure was developed to obtain high dc isolation and low RF loss over the full bandwidth. No impedance transformer was used at all. Broad-band input and output matching networks and shunt feedback topology were introduced to fulfill the bandwidth requirements. Typical values of 22-dB power gain, 37-dBm output power, 28% power-added efficiency, and 47-dBm third-order intercept points have been achieved in a two-stage design using a GaAs MESFET as driver stage. All power and linearity results were obtained over the whole frequency band. The design procedure is given in detail and the results are being discussed and compared with simulations.

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Section: Sic Mesfet Modelingmentioning

confidence: 99%

Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

Sayed

Boeck

2005

IEEE Trans. Microwave Theory Techn.

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“…However, the existing functions used to define these closed‐form equations, acceptable for many existing devices, may not be appropriate for newer device technologies, 12 for example, InP DHBTs. Other conventional modeling techniques, such as look‐up tables, 13 may not provide sufficient interpolation and/or extrapolation accuracy, or may perhaps come with high computational cost and/or memory requirements.…”

Section: Introductionmentioning

confidence: 99%

Machine learning technique based extremely broadband small‐signal behavioral model forInP DHBTs

Cai

Liu

King

et al. 2020

Int J RF Microw Comput Aided Eng

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A novel modeling methodology for indium phosphide (InP) double heterojunction bipolar transistors (DHBTs) based on the theory of Bayesian inference, a well‐known method from the field of machine learning, is presented in this article. An extremely broadband small‐signal behavioral model, from 200 MHz to 325 GHz, is built, tested, and validated in this work, with excellent agreement obtained between the extracted model and the experimental data in the form of S‐parameters. A single finger InP DHBT device, with emitter size of 0.5 × 5 μm2 exhibiting an ft of over 550 GHz, is used in the verification example. Taking advantage of regression techniques based on machine learning concepts, the proposed black‐box behavioral model can more accurately predict the behavior of the device compared with the traditional equivalent circuit modeling method. Several sets of measured vs modeled data are shown, indicating the efficacy of the method.

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“…It is worth underlying that the small-signal equivalent circuit can be used as cornerstone for building both large-signal and noise microwave models. [34][35][36][37][38][39][40][41][42] RFIC circuit designers use complicated large-signal models for designing RF circuits however, in cases when this is not available or when straightforward hand calculations are required, it is helpful to utilize a devoted small-signal model based on linear network. As will be shown, the S-parameter measurements are accurately reproduced by the extracted equivalent circuit, whose elements are analyzed vs temperature to understand the impact of the thermal effects on device microwave performance.…”

Section: Introductionmentioning

confidence: 99%

Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology

Alim

Rezazadeh

Crupi

2020

Int J RF Microw Comput Aided Eng

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This paper is focused on studying the behavior of a GaAs pseudomorphic high electron mobility transistors (pHEMT) with respect to the temperature. The tested pHEMT is realized using the multilayer three‐dimensional (3‐D) monolithic microwave integrated circuit (MMIC) technology. The analysis is based on temperature‐dependent on‐wafer measurements carried out from 298 K to 373 K. The experiments consist of DC characteristics and scattering parameters in the broad frequency range from 45 MHz to 40 GHz. The effect of the temperature on the measured transistor performance is analyzed in detail and then, to gain a better insight and understanding of the device behavior, the achieved measurements are used for extraction and validation of a small‐signal equivalent‐circuit model for different temperature conditions. This study shows that, by heating the studied device, the observed performance variations depend remarkably on the selected bias condition. In particular, the output current and transconductance are degraded at higher gate‐source voltage and improved as the transistor is driven towards the pinch‐off. This is due to the counterbalancing of temperature‐dependent effects contributing in opposite ways to the resultant behavior of the transistor. Therefore, depending on the given application, an appropriate selection of the bias and temperature conditions is essential to guarantee adequate transistor performance.

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An empirical table-based FET model

Cited by 124 publications

References 18 publications

Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

Two-stage ultrawide-band 5-W power amplifier using SiC MESFET

Machine learning technique based extremely broadband small‐signal behavioral model forInP DHBTs

Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology

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