An empirical model for predicting proton induced upset

Calvel, P.; Barillot, C.; Lamothe, P.; Ecoffet, R.; Duzellier, S.; Falguère, D.

doi:10.1109/23.556873

Cited by 111 publications

(39 citation statements)

References 14 publications

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“…Y is a linear function of energy, which goes to zero when the energy is equal to the critical energy Eo. A variation of this function called the two-parameter Bendel equation [21] is given as: a = (! !...-)*(1_e-OI8F rr (5) Eo…”

Section: Discussionmentioning

confidence: 99%

Single Event Upset energy dependence in a buck-converter power supply design

Drake

Lurgio

Gopalakrishnan

et al. 2012

2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

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Section: Discussionmentioning

confidence: 99%

Single Event Upset energy dependence in a buck-converter power supply design

Drake

Lurgio

Gopalakrishnan

et al. 2012

2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

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“…(1) The cross section for a nuclear reaction in Si induced by a 200 MeV proton is approximately s ¼ 0.06 barn [12,13,21,22]; (2) The recoiling heavy ions travel 10 mm in Si or SiO 2 below the active silicon layer [2,12,21]; (3) Considering SOI structure and heavy ions with short track length in metal and insulator layers, we assume that the recoiling heavy ions travel 5 mm in metal and insulator above the active silicon; herein we mainly consider the effect of proton interaction with metal and oxygen with the short track length of 5 mm in metal and insulator layers and in the prediction we will use the proton-silicon nuclear reaction cross section for these layers, which will be addressed in this section. (4) The recoiling heavy ions have an isotropic angular distribution [12,13]; and (5) An upset will take place when a recoiling heavy ion hits the sensitive volume in the memory cell.…”

Section: Proton Induced Seu Cross Section Predictionmentioning

confidence: 99%

Proton induced single event upset cross section prediction for 0.15 μm six-transistor (6T) silicon-on-insulator static random access memories

Li¹,

Zhou²,

Liu³

2012

Journal of Nuclear Science and Technology

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In this paper, an efficient physics-based method to estimate the saturated proton upset cross section for six-transistor (6T) silicon-on-insulator (SOI) static random access memory (SRAM) cells using layout and technology parameters is proposed. This method calculates the effects of radiation based on device physics. The simple method handles the problem with ease by SPICE simulations, which can be divided into two stages. At first, it uses a standard SPICE program to predict the cross section for recoiling heavy ions with linear energy transfer (LET) of 14 MeV-cm 2 /mg. Then, the predicted cross section for recoiling heavy ions with LET of 14 MeV-cm 2 /mg is used to estimate the saturated proton upset cross section for 6T SOI SRAM cells with a simple model. The calculated proton induced upset cross section based on this method is in good agreement with the test results of 6T SOI SRAM cells processed using 0.15 mm technology.

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“…Among the large number of analytical predictions methods for SEU induced by protons based on heavy ion data, SIMPA [1] and PROFIT [2] are the most widely used by the European space community, as they are included in the OMERE package [3]. These models were developed in the middle of 90s, both require to specify the sensitive thickness and both rely on simplifications which have shown their limits for process technologies below 130 nm (see Table 1).…”

Section: Introductionmentioning

confidence: 99%