An empirical HBT Large Signal Model for CAD

Angelov, I.; Choumei, K.; Inoue, Akihisa

doi:10.1109/mwsym.2002.1012293

Cited by 4 publications

(5 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For user convenience, the capacitance model is arranged to have the same names and values for common parameters like MJC, VJC, but it is more stable in Harmonic Balance simulations. In this study, it was found that simpler depletion capacitance model C bedepl , C bcdepl , provides a good fit for actual devices and capacitance equations [23] are simplified as Eq. (2).…”

Section: Model Implementation In Adsmentioning

confidence: 91%

“…Following equations are proposed as extension of previously published HBT model [23], [24] and implemented in ADS to model the leakage:…”

Section: Leakage Temperature Dependencementioning

confidence: 99%

“…The main purpose of this study was extensive LS evaluation of the HBT model. The HBT model and model parameters are described in details [23], [24], but several changes were made in the previous implementation to reflect refined temperature dependencies and to improve the model. First addition was implementation of temperature dependent leakage and temperature dependent thermal resistance.…”

Section: Model Implementation In Adsmentioning

confidence: 99%

“…First addition was implementation of temperature dependent leakage and temperature dependent thermal resistance. The capacitance model as it is described in [23] includes many of the features of other capacitance models [2], [6], [27], but it is defined from −∞ to +∞ without any poles, conditions etc. For user convenience, the capacitance model is arranged to have the same names and values for common parameters like MJC, VJC, but it is more stable in Harmonic Balance simulations.…”

Section: Model Implementation In Adsmentioning

confidence: 99%

“…(2). For user convenience, they can switch for the complete capacitance model [23] if required. In addition, some small adjustments were made to improve convergence like adding small numbers in the denominators etc.…”

Section: Model Implementation In Adsmentioning

confidence: 99%

See 4 more Smart Citations

Large Signal Evaluation of Nonlinear HBT Model

Angelov

Inoue

Watanabe

2008

IEICE Transactions on Electronics

Self Cite

View full text Add to dashboard Cite

The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS measurements like Power spectrum, Load pull and Inter-modulation investigations. Proposed model has adopted temperature dependent leakage resistance and a simplified capacitance models. The model was implemented in ADS as SDD. Important feature of the model is that the main model parameters are taken directly from measurements in rather simple and understandable way. Results show good accuracy despite the simplicity of the model. To our knowledge the HBT model is one of a few HBT models which can handle high current & Power HBT devices, with significantly less model parameters with good accuracy.

show abstract

Section: Model Implementation In Adsmentioning

confidence: 91%

“…Following equations are proposed as extension of previously published HBT model [23], [24] and implemented in ADS to model the leakage:…”

Section: Leakage Temperature Dependencementioning

confidence: 99%

Section: Model Implementation In Adsmentioning

confidence: 99%

Section: Model Implementation In Adsmentioning

confidence: 99%

Section: Model Implementation In Adsmentioning

confidence: 99%

See 3 more Smart Citations

Large Signal Evaluation of Nonlinear HBT Model

Angelov

Inoue

Watanabe

2008

IEICE Transactions on Electronics

Self Cite

View full text Add to dashboard Cite

show abstract

Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method

Huang

Luo

et al. 2019

IEEE Access

View full text Add to dashboard Cite

Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices. Therefore, the aim of this work is to utilize a general dimension-reduction method to quickly and accurately construct large-signal models of semiconductor devices with consideration of thermal effects. In general, the junction voltage dimension is represented by empirical functions, whereas the junction temperature dimension is described by the first-order Taylor series approximation. The final analytical current model is a combination of two independent sets of empirical functions. These functions are constructed from pulsed I-V measurements at different ambient temperatures. The percentages of different components are controlled by the thermal level. Two commercial InGaP/GaAs heterojunction bipolar transistors are investigated to verify the effectiveness of this method. The large-signal models are implemented in Advanced Design System. Excellent agreement is achieved between measurement and simulation of the I-V characteristics, S-parameters, and power sweeps. The dimension reduction method is able to effectively reduce the number of equations and parameters because the temperature dimension is expanded by using a Taylor series. In addition, this method would be applied to the thermal modeling of various devices based on new materials or process technologies. Accordingly, the dimension reduction method is powerful and useful in fast and accurate thermal modeling of microwave semiconductor devices.

show abstract