2020
DOI: 10.1109/jestpe.2019.2944724
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An Electrothermal Model for IGBT Based on Finite Differential Method

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Cited by 13 publications
(8 citation statements)
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“…In [127], a model was presented of the switching on/off dynamics of an IGBT. The temperature dependence of this switching on/off behaviour was modelled for high power IGBTs in [128,129]. Models were presented for determining the conduction and switching losses in [130] for the IGBT and in [131] for the IGCT.…”
Section: Power Electronic Convertermentioning
confidence: 99%
See 1 more Smart Citation
“…In [127], a model was presented of the switching on/off dynamics of an IGBT. The temperature dependence of this switching on/off behaviour was modelled for high power IGBTs in [128,129]. Models were presented for determining the conduction and switching losses in [130] for the IGBT and in [131] for the IGCT.…”
Section: Power Electronic Convertermentioning
confidence: 99%
“…Nevertheless, it allows combining the merits of different modelling techniques eventually leading to a more realistic virtual replica. Computational Fluid Dynamics [69] FEM structural blade model [70][71][72] Large Eddy Simulation (LES) [78][79][80] FEM model of turbine shaft [103] FEM model of the tower and support structure [89,90] Electromagnetic FEM [109][110][111] Dynamic switching models [127][128][129] Conduction and switching loss models [130,131] Transient wide-bandgap component models [132] Full pitch drivetrain models [150][151][152][153] Full yaw drivetrain models [154,155] Blade-Element Momentum [57] Extensions -Tip losses [60,61] -Dynamic stall [62,63] -Blade flexibility [64,65] -Tower and nacelle flow disturbance [66] -Gaussian [82] or Curl [83] wake model Surrogate models [73][74][75] Multi-body drivetrain model [101,102] Multi-body tower and foundation model [84][85][86]<...>…”
Section: Virtual Replicamentioning
confidence: 99%
“…A detailed overview of the modeling techniques and different complexity levels of IGBT models can be found in [153,154]. Although several physical and behavioral models of the coupled MOSFET-BJT structure of an IGBT device are presented in the literature [145,146,[155][156][157][158][159][160][161][162][163][164][165][166][167], the parameter extraction procedures ask for simultaneous fitting to both static and dynamic device measurement data, which makes the modeling of IGBTs a rather complex task even for major manufacturers. Quite a few of them provide models of some IGBT devices (e.g., [165,166]) but the accuracy and stability of these models differ and the selection of an appropriate model for system level EMC simulations is still challenging.…”
Section: Power Semiconductor Modelsmentioning
confidence: 99%
“…1. An accurate evaluation of the thermal dynamics can help to predict the stability of inverter systems [3][4][5] . In some conventional methods, the thermal impedance is derived from the datasheets of power modules and cooling systems; hence, an accurate calculation of the power loss is required.…”
Section: Introduction mentioning
confidence: 99%