An electron optical metrology system for pattern placement measurements

Häßler-Grohne, Wolfgang; Bosse, Harald

doi:10.1088/0957-0233/9/7/020

Cited by 70 publications

(35 citation statements)

References 12 publications

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“…Special care is taken in operation of the CD-SEM to achieve optimum reproducibility of the sample positioning and the imaging process. Figure 13 shows the so-called Electron-Optical Metrology System (EOMS) of the PTB, which combines a low-voltage scanning electron microscopy of the Zeiss ULTRA type and a large vacuum chamber which contains a laser-interferometer controlled 2D precision stage for positioning of larger planar substrates [24]. The EOMS has been applied, for example, for high precision calibration of a grating sample with a nominal pitch of 100 nm [25].…”

Section: Scanning Electron Microscopymentioning

confidence: 99%

Challenges in nanometrology: high precision measurement of position and size

Bosse

Bodermann

Dai

et al. 2015

Tm - Technisches Messen

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This contribution describes recent developments of the PTB in high precision position and size metrology as support for different nanotechnology applications. It will be shown how measurement uncertainties of about 1-2 nm for 1D-position of graduation lines on 152 mm photomasks (6''), or on line scales and incremental encoders of about 300 mm length have been achieved. The measurement of the size of nanoscale features represents additional challenges, because in addition to the length metric, also the location of opposite feature edges has to be precisely determined. In addition to other feature size or CD metrology techniques applied at PTB, a recent development which uses transmission electron microscopy in the traceability chain of AFM CD measurements will be described. The uncertainties achieved for CD measurements on high quality Si line structures are U 95% = 1.6 nm.

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Section: Scanning Electron Microscopymentioning

confidence: 99%

Challenges in nanometrology: high precision measurement of position and size

Bosse

Bodermann

Dai

et al. 2015

Tm - Technisches Messen

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“…The instrumentation used for SEM characterization was a Hitachi 54700 in one case and the PTB used a special metrology low voltage SEM, see e.g. [10]. Both of the DUV commercial optical metrology tools were only basically calibrated for image magnification by pitch measurements, but no customized CD calibration was applied.…”

Section: Measurements On Test and Prototype Masksmentioning

confidence: 99%

<title>Development and characterization of new CD mask standards: a status report</title>

Schatz

Hauffe²,

Döbereiner³

et al. 2003

19th European Conference on Mask Technology for Integrated Circuits and Microcomponents

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We report on the current status of a project on development and characterization of CD photomasks with 6025 format to be used as reference standards for different type of CD metrology instruments. The project consortium consists of mask suppliers, manufacturers of CD metrology instruments, users of such instruments and calibration laboratories. Different type of CD metrology instrumentation, namely optical CD microscopes, CD-SEM, and AFM will be applied for investigation and measurement of microstructures, additionally supported by AIMS tool. We will describe the basic design criteria of the mask standard and first measurement results gained with different metrology tools on the prototype mask standards.

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“…At PTB scatterometry methods and simulation models are investigated and applied in different wavelength regimes from the visible spectrum down to the EUV range [7][8][9] , see Fig.2 for the newly developed DUV scatterometer. For traceable calibration of linewidths on masks and wafers by scanning electron beam methods, the PTB primarily uses the electron optical metrology system (EOMS) [10] . The analysis of measured SEM line profiles is based on Monte Carlo simulation method, which model the elastic and inelastic scattering events of the primary electrons as well as the generated backscattered and secondary electrons.…”

mentioning

confidence: 99%

Model based reference metrology for dimensional characterization of micro- and nanostructures

Bodermann

Bosse

2008

Optoelectron. Lett.

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The requirements on the precision of dimensional metrology are especially stringent in the area of semiconductor manufacturing. This holds in particular for the measurement and control of the linewidths of the smallest structures on masks and silicon wafers and their corresponding reference metrology. In this paper we will describe the physical models and the reference instrumentation which were developed for photomask linewidth metrology at the PTB. It will be shown, how the results of the different methods can be used for comparative analyses. Application of these methods will be demonstrated exemplarily on the basis of newly developed photomask linewidth standards.Linewidth or critical dimension (CD) metrology is crucially important for production control in semiconductor and mask manufacturing. Stringent requirements on the stability of process control need highly stable CD metrology instrumentation and measurement processes with sub-nm reproducibility. These requirements are specified for current as well as future technology nodes in the so-called International Technology Roadmap for Semiconductors, (ITRS) [1] . In many cases different types of CD metrology instrumentation are in use in industry today and a meaningful comparison of their measurement results requires development and application of appropriate models for the different methods, especially if structural details are changing due to process variations. The PTB has developed different types of linewidth metrology instrumentation and corresponding physical models for image signal analysis and interpretation. These methods will be described here and their application to a photomask linewidth standard will be shown [2] .The different linewidth metrology methods will shortly be described with respect to the applied signal modelling approaches and the different experimental realizations. In our approaches we assume that the photomask features to be measured can usually well be approximated by trapezoidal shapes and by the material parameters for the absorbing or phase shifting material and additional anti-reflective layers, see Fig.1. However, this simplified trapezoidal model can be modified to also take into account more complex feature geometries. [3,4] . Fig.1 (a) UV transmission microscope setup used for CD metrology;(b) trapezoidal feature geometries modelled in RCWA (program package Microsim) and (c) FEM based simulations (program package DiPoG).

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An electron optical metrology system for pattern placement measurements

Cited by 70 publications

References 12 publications

Challenges in nanometrology: high precision measurement of position and size

Challenges in nanometrology: high precision measurement of position and size

<title>Development and characterization of new CD mask standards: a status report</title>

Model based reference metrology for dimensional characterization of micro- and nanostructures

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