2006
DOI: 10.1016/j.nima.2005.11.065
|View full text |Cite
|
Sign up to set email alerts
|

An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
41
0

Year Published

2006
2006
2021
2021

Publication Types

Select...
4
3
3

Relationship

0
10

Authors

Journals

citations
Cited by 75 publications
(41 citation statements)
references
References 12 publications
0
41
0
Order By: Relevance
“…By means of wafer post-processing [7] the Micromegas grid can be integrated directly on top of Silicon wafers [8]. With this technology it will be possible to precisely cover CMOS chip wafers with an amplification grid, resulting in a fully integrated readout device for gaseous detector.…”
Section: Ingridmentioning
confidence: 99%
“…By means of wafer post-processing [7] the Micromegas grid can be integrated directly on top of Silicon wafers [8]. With this technology it will be possible to precisely cover CMOS chip wafers with an amplification grid, resulting in a fully integrated readout device for gaseous detector.…”
Section: Ingridmentioning
confidence: 99%
“…Chefdeville et al [11] demonstrated a Micromegas grid built directly on a silicon wafer, suspended by insulating micropillars obtained by SU-8 photolithography. The fabrication steps used to manufacture this structure are similar to the ones described before for the MGSDs.…”
Section: Micromesh Gaseous Structure Detectorsmentioning
confidence: 99%
“…This combination of Micromegas and ASIC is called InGrid. The mesh is built in a post-processing step similar to the production of bulk-Micromegas and consists of 50 µm high SU8-pillars and a 0.8 µm thick aluminum plane with holes that are aligned with the pixels of the Timepix chip (see figure 8 and references [28] and [29]). …”
Section: Ingridmentioning
confidence: 99%