An electron cyclotron resonance plasma deposition technique employing magnetron mode sputtering

Takahashi, Chiharu; Kiuchi, Mikiho; Ono, Takahito; Matsuo, Seitaro

doi:10.1116/1.575588

Cited by 51 publications

(17 citation statements)

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“…A magnetron sputtering source has been integrated into an electron cyclotron resonance plasma deposition system [183]. Films of A1 2 0 3 and Ta 2 0 5 were deposited by high-rate reactive sputtering.…”

Section: Emerging Technologiesmentioning

confidence: 99%

Sputter Deposition Processes

Parsons

1991

Thin Film Processes

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Section: Emerging Technologiesmentioning

confidence: 99%

Sputter Deposition Processes

Parsons

1991

Thin Film Processes

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“…ECR sputtering with a magnetron was also studied. 5,7,16,17 A pure magnetic field confinement in the mirror field has not yet been tested for ECR sputtering. Such a system could provide a steady operation at very low pressures pϽ10 Ϫ2 Pa with a large ion flux to a substrate.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7] Ionization and excitation of the working medium by a microwave ECR discharge result in low working pressures down to 5ϫ10 Ϫ3 Pa, large substrate ion fluxes of 1-10 mA/cm 2 and in a high reactivity of the molecular gas. A number of examples of the beneficial influence of the microwave ECR plasma enhancement of the sputtering discharge on the deposition of various types of thin films can be found in the literature.…”

Section: Introductionmentioning

confidence: 99%

Electron cyclotron resonance plasma enhanced direct current sputtering discharge with magnetic-mirror plasma confinement

Mišina

Setsuhara

Miyake

1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Plasma confinement in a mirror magnetic field was applied to the electron cyclotron resonance (ECR) plasma enhanced dc sputtering discharge sustained at pressures below 10−2 Pa. Ion current densities up to 12 mA/cm2, plasma densities about 1011cm−3 and electron temperatures about 25 eV were measured by a Langmuir probe. The cathode current was maximum when the ECR zone was close to the cathodezECR<10 cm (measured from the center of the cathode). A mirror ratio MR⩾3 was necessary for sustaining the discharge at simultaneously large microwave powers and cathode voltages. An application of the system studied to the ion assisted deposition of metallic and compound thin films with a controlled crystal structure is proposed.

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“…In addition, ECR plasma deposition with a sputtering-material supply ͑ECR sputter deposition͒ is very useful for depositing dielectric films, such as metal oxides and metal nitrides. [3][4][5][6] To extend these features to conductive film deposition, we have developed an ECR plasma source that has a microwave divider, a composer, and quartz windows placed far away from the plasma. 7,8 Tantalum film prepared by rf sputtering has been used as an x-ray absorber 9,10 in x-ray lithography, which is considered to be the most promising technology for 100 nm pattern fabrication.…”

Section: Introductionmentioning

confidence: 99%

Tantalum film for x-ray lithography mask deposited by electron cyclotron resonance plasma source coupled with divided microwaves

Nishimura

Ono

Oda

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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An advanced electron cyclotron resonance (ECR) plasma source coupled with divided microwaves has been applied to Ta film formation. The feasibility of the Ta film as an x-ray mask absorber is investigated. The stress in an x-ray absorber material must be low, uniform, and stable. According to the results of an investigation on the stress-depth distribution in Ta film, the stress can be described as the sum of interfacial stress (that retained near the film–substrate interface) and bulk stress (that retained in the film bulk). It is found that these individual stresses can be independently controlled. The interfacial stress depends on the substrate temperature, working-gas pressure, and deposition rate. The bulk stress becomes compressive by adding Ar to the sputtering gas (Xe). A low stress film of 23 MPa (400 nm thick film) with no stress-depth distribution is obtained using optimized deposition parameters of 3.3×10−2 Pa of Xe, 1.75 sccm of Ar, and 280 °C substrate temperature. The ECR Ta film showed excellent stability against stress with a change in stress of less than 5 MPa after the x-ray mask fabrication process and synchrotron radiation irradiation. A highly accurate x-ray mask is fabricated by a wafer process using an ECR-deposited Ta film. The maximum image placement (IP) error of the x-ray mask is less than 60 nm, which includes the IP error induced by membrane shrinkage during back etching.

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An electron cyclotron resonance plasma deposition technique employing magnetron mode sputtering

Abstract: Articles you may be interested inPlasma enhanced direct current planar magnetron sputtering technique employing a twinned microwave electron cyclotron resonance plasma source

Cited by 51 publications

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Sputter Deposition Processes

Sputter Deposition Processes

Electron cyclotron resonance plasma enhanced direct current sputtering discharge with magnetic-mirror plasma confinement

Tantalum film for x-ray lithography mask deposited by electron cyclotron resonance plasma source coupled with divided microwaves

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