1997
DOI: 10.1109/4.553188
|View full text |Cite
|
Sign up to set email alerts
|

An eight-bit prefetch circuit for high-bandwidth DRAM's

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2005
2005
2020
2020

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 4 publications
0
1
0
Order By: Relevance
“…As the result system memory needs to be working at high speed with less logic utilization. Over the years, the need for greater memory bandwidth [1] has driven system memory evolution from asynchronous DRAM technologies [2][3][4] to high-bandwidth synchronous DRAM (SDRAM) [5][6][7], and finally to today's double data rate (DDR) SDRAM technologies [8,9]. Only a few years ago, "regular" SDRAM was introduced as a replacement for the older fast page mode (FPM) and extended data out (EDO) asynchronous DRAM technologies.…”
Section: Introductionmentioning
confidence: 99%
“…As the result system memory needs to be working at high speed with less logic utilization. Over the years, the need for greater memory bandwidth [1] has driven system memory evolution from asynchronous DRAM technologies [2][3][4] to high-bandwidth synchronous DRAM (SDRAM) [5][6][7], and finally to today's double data rate (DDR) SDRAM technologies [8,9]. Only a few years ago, "regular" SDRAM was introduced as a replacement for the older fast page mode (FPM) and extended data out (EDO) asynchronous DRAM technologies.…”
Section: Introductionmentioning
confidence: 99%