An efficient voltage-mode class-D power amplifier for digital transmitters with delta-sigma modulation

Kim, W.; Rode, J.; Scuderi, A.; Park, C.; Asbeck, P.M.; Son, Han Seong

doi:10.1109/mwsym.2011.5972623

Cited by 16 publications

(8 citation statements)

References 7 publications

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“…Longer segments increase node spacing, thus reducing the coupling between the shunt resonators. Using ( 16), the inductor segment lengths were obtained, and via (17) and simulations, the radial stub lengths l rad,k were computed. Table 2 summarizes the optimized LP dimensions as well as the resonance frequency f rad,k of the radial stubs.…”

Section: Tunable Multi-bandstop Lowpass Filtermentioning

confidence: 99%

Concept for Continuously Tunable Output Filters for Digital Transmitter Architectures

et al. 2019

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This paper presents a novel output filter approach for continuously frequency-tunable digital power amplifiers, suitable for future seamless and band-less applications in 5G, e.g. for cognitive radios (CR). The presented tunable output filter is based on a multi-bandstop lowpass response to regenerate the original microwave signal at the output of the digital amplifier stage by suppressing unwanted frequency components. Compared to conventional tunable bandpass solutions, it offers higher tunability, higher linearity, good power handling capability and moderate losses especially around the carrier frequency. A tunable power amplifier (PA) demonstrator consisting of a 4-stage digital GaN PA MMIC and the novel tunable filter, is designed and fabricated for a carrier frequency range from 1 GHz to 3 GHz. Tunability is achieved by using commercial barium strontium titanate (BST) varactors. Small signal measurements were performed to evaluate tunability and suppression capabilities of the novel filter structure, which reveal a frequency tunability of 67 % with a suppression level of at least 13 dB for the undesired frequency components. The proposed filter structure exhibits a linearity over the tuning range with an OIP3 between 66 dBm to 70 dBm and high power handling capability. Finally, the performance analysis of the tunable PA demonstrator shows an peak efficiency of 70 %. Due to frequency limitations of the used PA stage, the efficiency slowly degrades to 20 % at the upper frequency band edge. Simultaneously, the output power varies between 27 dBm to 31 dBm.INDEX TERMS Tunable circuits and devices, microwave power amplifiers, digital amplifiers, GaN, tunable filters, BST.

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Section: Tunable Multi-bandstop Lowpass Filtermentioning

confidence: 99%

Concept for Continuously Tunable Output Filters for Digital Transmitter Architectures

et al. 2019

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“…where X  is the small increment undergone by the circuit variables, and the vector and matrices , , , X Y A B include all the harmonic indexes k = NH to NH of those defined in (2). In fact, the matrices ( , ) X is made up of the derivatives of the harmonic components of the device nonlinearities with respect to the harmonic components of their control voltages, evaluated at the periodic steady state.…”

Section: Frequency-domain Analysismentioning

confidence: 99%

“…These requirements have been fueling research on the digital microwave power amplifier (DPA) during the last years [2]- [5], as the RF PA is the last analog part in the almost digitized base station. Well known in the audio region, the digital PA concepts like class S have been transferred more and more to Manuscript received May 3, 2016.…”

Section: Introductionmentioning

confidence: 99%

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Stability Analysis of Digital Microwave Power Amplifiers

Suárez

Wentzel

Heinrich

2017

IEEE Trans. Microwave Theory Techn.

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Abstract-This work presents a stability analysis of microwave power amplifiers (PA) driven by binary pulse trains, as in the case of class-S PAs. First, using a simplified digital PA test-bench in class-D configuration, different qualitative behaviors are obtained when varying the pulse width, including subharmonic and incommensurable oscillations. The mechanisms affecting the stability properties are studied with a harmonicbalance based formulation, by means of pole-zero identification and bifurcation detection. A sufficiently high number of harmonic components must be considered, together with Krylov decomposition for an efficient computation of the inverse of the Jacobian matrix. It is demonstrated that, when varying the pulse width, distinct pairs of complex-conjugate poles may shift to the right-hand side of the complex plane and, therefore, lead to different kinds of unstable behavior. This phenomenon is related to the dependence of the critical poles on the average value of the input signal. Boundaries of the various types of unstable behavior are traced in the plane defined by the pulse repetition rate and pulse width, using bifurcation detection techniques. All the predicted phenomena have been confirmed experimentally. In a second step, the algorithms derived from the simple class-D circuit are transferred to study the stability of a more complex tri-band class-S amplifier. It has been analyzed versus the input bitrate, obtaining a fully stable behavior that has been validated experimentally.

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“…Two different structures, which are generally called voltage‐mode and current‐mode, are suitable for the SMPA. Until recently, voltage‐mode class‐S power amplifier (PA) using silicon on insulator CMOS technology has been demonstrated at 800 MHz , and a few class‐S PAs using MMIC, such as H‐bridge class‐D PA at 800 MHz and current‐mode class‐S (CMCS) PA at 450 MHz, have been presented for a band‐pass delta‐sigma modulated single tone . For a high power operation, the CMCS PA is an excellent candidate having several advantages, such as minimized drain‐source capacitance (Cds) and simple driver circuitry, as well as convenience of using various board materials to solve the thermal problem without considering a stacked transistor.…”

Section: Introductionmentioning

confidence: 99%

GaN HEMT‐based hybrid current‐mode class‐S power amplifier for 955 MHz LTE signal

Park

Yook

Park

et al. 2014

Micro & Optical Tech Letters

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This article presents a gallium nitride‐based hybrid current‐mode class‐S (CMCS) power amplifier (PA) in conjunction with a realized band‐pass delta‐sigma modulator for 955 MHz long‐term evolution (LTE) signal. Commercial surface mount Schottky diodes are located behind switching transistors to protect them against negative voltage swing, and performances are analyzed from the perspective of the variations of the output voltage and current waveforms by the intrinsic components of diode. In particular, the chip‐on‐board technique is adopted to enhance the drain efficiency, and the differential output filter and balun composed of lumped LC resonators are integrated at the back of the switching transistor to extract amplified LTE signal. From the measured results with an 8.5 dB peak to average power ratio 3G LTE 10 MHz input signal, the proposed CMCS PA shows maximum average output power of 37.1 and 32.2 dBm, and the resulting drain efficiencies of 35.5 and 38.5% with the drain voltage of 20 and 10 V, respectively. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2118–2121, 2014

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An efficient voltage-mode class-D power amplifier for digital transmitters with delta-sigma modulation

Cited by 16 publications

References 7 publications

Concept for Continuously Tunable Output Filters for Digital Transmitter Architectures

Concept for Continuously Tunable Output Filters for Digital Transmitter Architectures

Stability Analysis of Digital Microwave Power Amplifiers

GaN HEMT‐based hybrid current‐mode class‐S power amplifier for 955 MHz LTE signal

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