Abstract:This article presents a gallium nitride‐based hybrid current‐mode class‐S (CMCS) power amplifier (PA) in conjunction with a realized band‐pass delta‐sigma modulator for 955 MHz long‐term evolution (LTE) signal. Commercial surface mount Schottky diodes are located behind switching transistors to protect them against negative voltage swing, and performances are analyzed from the perspective of the variations of the output voltage and current waveforms by the intrinsic components of diode. In particular, the chip… Show more
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