An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface

Snyman, Lukas W.; Plessis, Monuko du; Seevinck, E.; Aharoni, H.

doi:10.1109/55.806102

Cited by 70 publications

(34 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When a reverse bias voltage is applied between the inner p+ centroid and the n+ ring arrangement, a lateral and concentric electrical field is created between the p+ centroid and the n+ rings, which results in the creation of extended depletion layer at each n+p interface facing the p+ centroid. Due to the high doping concentration at the surface of the intersecting Si-SiO 2 interface, the light is emitted vertically from the device through the thin residual SiO 2 layer present on the Si surface [8].…”

Section: Field-effect Electroluminescence In Siliconmentioning

confidence: 99%

Silicon Light-Emitting Device with Application in on-Chip Micro-opto-electro-mechanical and Chemical-opto-electro Micro Systems

Xu¹,

Snyman²,

Polleux³

et al. 2015

IJMMM

View full text Add to dashboard Cite

Abstract-The advances in silicon photonics related device development have been evolved into standard complementary metal-oxide-semiconductor (CMOS) technology in recent years. The emission of visible light (400-900 nm) by a monolithically integrated silicon p-n junction under reverse bias presents the silicon light-emitting device (Si-LED). As an integrated optical source, it is then developed for coupling light into the optic waveguide. Through the Monte Carlo and Rsoft BeamPROP simulations, the vertical emission, focusing, refraction, splitting and wave-guiding are also optimized using the same CMOS technology. Since the Si-LED, the SiO 2 -waveguide, and the Si-photodetector can be monolithically integrated on the same bulk-Si substrate, a concise micro-opto-electro-mechanical systems (MOEMS) could be realized in the modern CMOS structural & integrated circuitry standard platform.

show abstract

Section: Field-effect Electroluminescence In Siliconmentioning

confidence: 99%

Silicon Light-Emitting Device with Application in on-Chip Micro-opto-electro-mechanical and Chemical-opto-electro Micro Systems

Xu¹,

Snyman²,

Polleux³

et al. 2015

IJMMM

View full text Add to dashboard Cite

show abstract

“…The light emission of silicon LED was first reported in 1955 [3]. Lots of efforts were made in integrating the silicon PN junction for the emission of visible light in standard VLSI (Very Large Scale Integration) technology [4][5] [6]. The LED in this paper is fabricated with photodiode and waveguide using standard 0.35µm CMOS technology.…”

Section: Light Emitting Diodementioning

confidence: 99%

A Proposed Silicon Optical Electronic Integrated Circuit with Monolithic Integration of LED, OPFET and Receiver Circuit

Afzal¹

2012

IOSRJCE

View full text Add to dashboard Cite

show abstract

“…Part of them are light emitting devices when the activation is electrical, for example, electroluminescence based devices [4][5][6], and part of them are receptor devices [7][8][9][10] such as the SOIPAM (Silicon-On-Insulator Photo-Activated Modulator) nanoscale improved device, in which the modulation control command is optic, as previously reported [11][12][13]. Additional investigations and simulations brought some breakthrough in this modulator, when it appears that thermal activation which could be related to the absorption of RF radiation, for instance, enables turning the device into a thermal sensor.…”

Section: Introductionmentioning

confidence: 99%

Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor

Mandelbaum¹,

Gadasi²,

Chelly³

et al. 2017

Journal of Sensors

View full text Add to dashboard Cite

A new nanoscale SOI dual-mode modulator is investigated as a function of optical and thermal activation modes. In order to accurately characterize the device specifications towards its future integration in microelectronics circuitry, current time variations are studied and compared for "large signal" constant temperature changes, as well as for "small signal" fluctuating temperature sources. An equivalent circuit model is presented to define the parameters which are assessed by numerical simulation. Assuring that the thermal response is fast enough, the device can be operated as a modulator via thermal stimulation or, on the other hand, can be used as thermal sensor/imager. We present here the design, simulation, and model of the next generation which seems capable of speeding up the processing capabilities. This novel device can serve as a building block towards the development of optical/thermal data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.

show abstract

An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface

Cited by 70 publications

References 13 publications

Silicon Light-Emitting Device with Application in on-Chip Micro-opto-electro-mechanical and Chemical-opto-electro Micro Systems

Silicon Light-Emitting Device with Application in on-Chip Micro-opto-electro-mechanical and Chemical-opto-electro Micro Systems

A Proposed Silicon Optical Electronic Integrated Circuit with Monolithic Integration of LED, OPFET and Receiver Circuit

Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor

Contact Info

Product

Resources

About