An efficient CAD-oriented large-signal MOSFET model

Grebennikov, A. V.; Lin, Fujiang

doi:10.1109/22.873903

Cited by 15 publications

(7 citation statements)

References 22 publications

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“…The current in and between the subthreshold and quadratic regions is often modeled with [16], [17] (6) (7) (8) where controls the turn-on abruptness, the turn-on voltage, and the slope in the quadratic region.…”

Section: A Nonlinear Drain Current Modelmentioning

confidence: 99%

“…and are standard model parameters [5], [7], [16]. The parameter controls the transition from triode to saturated region.…”

Section: A Nonlinear Drain Current Modelmentioning

confidence: 99%

“…Some of the parameters used may be nonconstant, depending on the accuracy required, e.g, (15) (16) (17) (18) Various possible dependencies of the model parameters-such as temperature, bias, and scaling effects-are beyond the scope of this paper, but have been investigated in [6] and [16].…”

Section: A Nonlinear Drain Current Modelmentioning

confidence: 99%

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Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

Fager

Pedro

Carvalho

et al. 2002

IEEE Trans. Microwave Theory Techn.

112

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Abstract-In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented. The model is verified against various measurements at low as well as high frequency in a class-AB power amplifier circuit.

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Section: A Nonlinear Drain Current Modelmentioning

confidence: 99%

“…and are standard model parameters [5], [7], [16]. The parameter controls the transition from triode to saturated region.…”

Section: A Nonlinear Drain Current Modelmentioning

confidence: 99%

See 1 more Smart Citation

Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

Fager

Pedro

Carvalho

et al. 2002

IEEE Trans. Microwave Theory Techn.

112

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“…The large signal equivalent circuit of the N-channel MOSFET is shown in Fig. 1 (15,16). In the common source configuration, the gate (G) is the input terminal, the drain (D) is the output terminal, and the source (S) is the ground terminal.…”

Section: Theorymentioning

confidence: 99%

RF current element design for independent control of current amplitude and phase in transmit phased arrays

Kurpad

Wright

Boskamp

2006

Concepts Magn. Reson.

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ABSTRACT:Both the optimization of B 1 field homogeneity in high-field MRI and the implementation of the exciting new theory of transmit SENSE can be accomplished by individual and independent control of the amplitude and phase of current on the elements or rungs of a radio frequency (RF) transmit coil array. One way of achieving this is by using the concept of the active rung, which consists of one rung of a volume coil connected across the output terminals of an RF power MOSFET. The RF power MOSFET is used as a voltage-controlled current source and drives RF current through the rung. The amplitude and phase of the RF current are controlled by the amplitude and phase of the RF control voltage. In this article, we demonstrate that the active rung may be used as a current element by tuning the rung to series resonance. We then demonstrate, using field measurements, that the current induced by adjacent rungs is suppressed by greater than 15 dB in a current element relative to a resonant loop representing a single element of the well known TEM coil. Thus, the active rung configuration enables significantly greater isolation and independence between rungs than in conventional designs where each rung is fed by a voltage source. Measurements and theory demonstrate a dynamic range of independent control of the rung current amplitude of 17 dB. We conclude that the degree of suppression is dependent on the size of the MOSFET output parasitic capacitance. The active rung should find application as a building block in the construction of parallel transmit coils.

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“…Several semi‐empirical analytical I DS ( V GS , V DS ) modeling techniques for GaN and GaAs HEMT devices have been developed, 3‐18 for example, table‐based Artificial Neural Networks (ANNs), or analytical modeling techniques. The table‐based model represents each element to be model with a lookup table developed from measured data.…”

Section: Introductionmentioning

confidence: 99%

A nonlinear empirical I/V model for GaAs and GaN FETs suitable to design power amplifiers

Ochoa‐Armas¹,

Lavandera-Hernandez²,

Fernández‐Ramón³

et al. 2021

Int J RF Microw Comput Aided Eng

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This article presents an improved nonlinear empirical I/V model suitable for GaAs and GaN FETs. The new drain‐to‐source current formulation accurately represents the symmetric and the asymmetric bell‐shaped transconductance (gm) for all VDS values. Besides modeling with high accuracy the I/V characteristic, the proposed model can fit the first and second derivatives of the transconductance, from the ohmic to the saturation region, including the pinch‐off region. The high correlation between experimental and simulated data of the I/V curves of GaAs and GaN FETs, ACPR, load‐pull, and a class‐J power amplifier designed in S‐band corroborates the usefulness of the proposed model, considering only the static I/V model as the main nonlinear element of the electrical equivalent circuit model of the transistor.

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An efficient CAD-oriented large-signal MOSFET model

Cited by 15 publications

References 22 publications

Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

RF current element design for independent control of current amplitude and phase in transmit phased arrays

A nonlinear empirical I/V model for GaAs and GaN FETs suitable to design power amplifiers

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