Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

Fager, Christian; Pedro, José; Carvalho, Nuno Borges; Zirath, Herbert

doi:10.1109/tmtt.2002.805187

Cited by 112 publications

(50 citation statements)

References 16 publications

(37 reference statements)

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“…Such sweet spots offer an increase of several dB in the carrier to IM3 ratio. A know property is the relation between the existence of those sweet spots, their power level position, and the amplifier class of operation [7]. By changing the I DQ current slider, one can identify the existence of such sweet spots and find the suitable operation point relative to it in a similar to ''live update'' result.…”

Section: Resultsmentioning

confidence: 99%

Automated multidimensional characterization of power amplifier for design and production

Nader

Al-Tahir

Andersen

et al. 2009

2009 IEEE Intrumentation and Measurement Technology Conference

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Abstract-Designing, optimizing and producing modern power amplifiers (PA) requires new and fast RF (radio frequency) measurement techniques capable of characterizing its real behavior. PAs are a truly multidimensional device where many desired performance parameters are contradictory to each other. This is especially true for the generation of modern communication PAs that require high efficiency, high linearity as well as high bandwidth. This paper presents a software-defined measurement setup for fast and cost efficient multidimensional measurements based on highly accurate standard instruments and a PC. The test bed as well as the graphical user interface is presented along with a demonstration of its functionality. During tuning of tank networks, drain quiescent current, and bias conditions, 3-dimensional graphs can be selected for the most appropriate axes of trade-off parameters to display a true behavior of the PA under test subjected to real-world or close to real-world signals. The measurement system offers the possibility to monitor envelope-tracking dynamic power consumption up to 100 MHz plus the possibility to use high crest factors.

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Section: Resultsmentioning

confidence: 99%

Automated multidimensional characterization of power amplifier for design and production

Nader

Al-Tahir

Andersen

et al. 2009

2009 IEEE Intrumentation and Measurement Technology Conference

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show abstract

“…For the drain current, we use the analytical expression (1) from [22] as this expression has been shown to fit accurately the current data in the near-threshold region. This is typically where the LDMOS power transistor is biased for power amplifier applications:…”

Section: A Transistor Model Developmentmentioning

confidence: 99%

Multiphysics Modeling of RF and Microwave High-Power Transistors

Aaen¹,

Wood

Bridges³

et al. 2012

IEEE Trans. Microwave Theory Techn.

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Abstract-In this paper, we present a multi-physics approach for the simulation of high-power RF and microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze a laterally diffused metal-oxide semiconductor (LDMOS) transistor that has a total gate width of 102 mm and operates at 2.14 GHz. The transistor die is placed in a metal-ceramic package, with bondwire arrays connecting the die to the package leads. The effects of three different gate bondpad layouts on the transistor efficiency are studied. Through plots of the spatial distributions of the drain efficiency and the time-domain currents and voltages across the die, we reveal for the first time unique interactions between the electromagnetic effects of the layout and the microwave behaviour of the large-die LDMOS power field-effect transistor (FET).Index Terms-Global modeling, electrothermal, laterallydiffused metal-oxide-semiconductor (LDMOS) transistor, power field-effect transistor (FET).

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“…One example of a drain current function approximation that we can use is the analytical expression due to Fager et al [10] to fit the high frequency drain current data [11]. This expression has an improved fit, compared with earlier FET models, to the drain current data in the near-threshold region, which is typically where the LDMOS power transistor is biased for power amplifier applications.…”

Section: A Drain Current Modelmentioning

confidence: 99%

A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors

Wood¹,

Aaen²,

Bridges³

et al. 2009

IEEE Trans. Microwave Theory Techn.

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Abstract-A new nonlinear, charge-conservative, scalable, dynamic electro-thermal compact model for LDMOS RF power transistors is described in this paper. The transistor is characterized using pulsed I-V and S-parameter measurements, to ensure isothermal conditions. A new extrinsic network and extrinsic parameter extraction methodology is developed for high power RF LDMOS transistor modeling, using manifold de-embedding by electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The intrinsic model comprises controlled charge and current sources that have been implemented using artificial neural networks (ANNs), designed to permit accurate extrapolation of the transistor's performance outside of the measured data domain. A thermal sub-circuit is coupled to the nonlinear model. Largesignal validation of this new model shows a very good agreement with measurements at 2.14 GHz.

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Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

Cited by 112 publications

References 16 publications

Automated multidimensional characterization of power amplifier for design and production

Automated multidimensional characterization of power amplifier for design and production

Multiphysics Modeling of RF and Microwave High-Power Transistors

A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors

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