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2023
DOI: 10.1002/admt.202370005
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An Automated System for Strain Engineering and Straintronics of 2D Materials (Adv. Mater. Technol. 1/2023)

Abstract: Strain Engineering In article number 2201091, Andres Castellanos‐Gomez and co‐workers present an automated experimental setup to perform strain engineering experiments with two‐dimensional materials with unprecedented accuracy and reproducibility has been developed. The setup employs a motorized stage and three‐point bending apparatus geometry to control the applied strain on the materials, enabling changes of strain in steps as small as 10−6%.

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Cited by 4 publications
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“…This is a conventional approach to study strain engineering in 2D materials and so envisages their potential exploitation in straintronic devices. [ 30 ] The applied strain can be derived by measuring the radius of curvature of the sample assuming that the thickness of the sample is negligible compared to those of the flexible polymer and tape (total thickness d ). Moreover, since d is much smaller than the radius of curvature of the osculating circle r (Figure 2a,b) the bending strain can be approximated as ε = d /2 r , and the sample is under pure tensile loading.…”
Section: Resultsmentioning
confidence: 99%
“…This is a conventional approach to study strain engineering in 2D materials and so envisages their potential exploitation in straintronic devices. [ 30 ] The applied strain can be derived by measuring the radius of curvature of the sample assuming that the thickness of the sample is negligible compared to those of the flexible polymer and tape (total thickness d ). Moreover, since d is much smaller than the radius of curvature of the osculating circle r (Figure 2a,b) the bending strain can be approximated as ε = d /2 r , and the sample is under pure tensile loading.…”
Section: Resultsmentioning
confidence: 99%
“…The breaking of the degeneracy causes the splitting of the E 2g mode in the case of the presence of uniaxial strain larger than 0.8%. 21,27 Fig. 3b reports the statistical analysis of the Raman mode separation, obtained by the Raman maps of a single flake shown in ESI Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Several previous works have demonstrated the strain dependence of the PL emission energy and intensity. 21,22,27,41,44,67,68 In the case of the MoS 2 monolayer, the standard PL spectrum presents two main peaks attributed to the A and B excitons. The emission energy of the A exciton is reported to vary between 1.82 eV and 1.89 eV, 21,27,68,69 while the B exciton energy varies between 1.97 eV and 2.05 eV, 21,27,44,68,69 In our particular case, Fig.…”
Section: Resultsmentioning
confidence: 99%
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