Bendable Silicene Membranes

Abstract

Due to their superior mechanical properties, 2D materials have gained interest as active layers in flexible devices co‐integrating electronic, photonic, and straintronic functions altogether. To this end, 2D bendable membranes compatible with the technological process standards and endowed with large‐scale uniformity are highly desired. Here, it is reported on the realization of bendable membranes based on silicene layers (the 2D form of silicon) by means of a process in which the layers are fully detached from the native substrate and transferred onto arbitrary flexible substrates. The application of macroscopic mechanical deformations induces a strain‐responsive behavior in the Raman spectrum of silicene. It is also shown that the membranes under elastic tension relaxation are prone to form microscale wrinkles displaying a local generation of strain in the silicene layer consistent with that observed under macroscopic mechanical deformation. Optothermal Raman spectroscopy measurements reveal a curvature‐dependent heat dispersion in silicene wrinkles. Finally, as compelling evidence of the technological potential of the silicene membranes, it is demonstrated that they can be readily introduced into a lithographic process flow resulting in the definition of flexible device‐ready architectures, a piezoresistor, and thus paving the way to a viable advance in a fully silicon‐compatible technology framework.

Non-volatile resistive switching in nanoscaled elemental tellurium by vapor transport deposition on gold

“…To have a closer insight into this aspect and thus unveil the origin of the RS mechanism, crosssectional images of the tellurium film deposited on gold substrates were acquired using an The exploitation of the Au/Mica as a platform for memristor devices opens the door to the realization of flexible memristors using delamination in the form of membrane as reported for the case of silicene. 51,52 Notably, our findings demonstrate that the local scale RS mechanism demonstrated by the C-AFM characterization is suitable for the implementation and realization of real memristor devices.…”

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

“…The recent surge of interest in two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) [1][2][3][4][5][6] and single elemental materials, 7 has enabled tremendous progress in a broad range of applications, such as electronics, 8,9 optoelectronics, 10,11 spintronics, 12,13 non-volatile memories, 14 and neuromorphic computing. 15,16 In this regard, single elemental 2D materials, such as graphene, [17][18][19] phosphorene, 14,20 silicene, 21,22 and others, have gained much attention due to their superior properties. 7 Despite its remarkable mobility and flexibility, graphene lacks a bandgap, which poses a significant hindrance to its application in digital logic circuits and transistors.…”

Traditional and Iterative Group-IV Material Batteries through Ion Migration

“…Over the past few decades, in addition to traditional amorphous carbon and graphite, various carbon materials like graphene and graphdiyne (GDY), as well as other Group-IV materials such as silicene, germanene, and tin have become well known. These materials not only differ in morphology and dimensions but also exhibit distinct local electronic structures [33][34][35]. Hence, a comprehensive understanding of the energy storage properties of various carbon materials still requires further research.…”