An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

Hot Carrier Injection Reliability in Nanoscale Field Effect Transistors: Modeling and Simulation Methods

“…In order to calculate the HCI-induced threshold voltage shift under stress voltages with different waveforms and frequencies, numerical simulation methods were developed for SOI MOSFETs and FinFETs [26,27,33]. The simulation process can be divided into three parts: (1) the current density can be obtained by numerically solving carrier transport equations, then the time dependent heat generation rate for the device under different stresses voltage can be obtained; (2) by using a numerical method to solve the time-dependent thermal conduction equation, the transient temperature responses can be obtained [26,27,33]; (3) HCI induced threshold voltage shift (TVS) as a function of time is then captured numerically based on the temperature response [26,27,33]. The numerical methods can simulate HCI under various stress voltages and operation conditions.…”

“…Figure 1a shows the 3D schematics of a 3-Fin 14 nm n-type FinFET, including the source extension, source, channel, drain and drain extension [67,69,70]. The cross sections of the FinFET perpendicular to and parallel to the channel are shown in Figure 1b,c, respectively [33]. The heat generation rate along the channel direction in this FinFET is shown in Figure 2 [33].…”

“…The cross sections of the FinFET perpendicular to and parallel to the channel are shown in Figure 1b,c, respectively [33]. The heat generation rate along the channel direction in this FinFET is shown in Figure 2 [33].…”

“…In 2019, a SPICE compatible compact hot carrier degradation time kinetics model was proposed for conventional, lightly doped drain, and drain extended MOSFETs and FinFETs [32]. In 2022, Wang et al introduced the artificial neural network (ANN) method into HCI reliability prediction and significantly reduced the HCI simulation cost [33].…”

“…The review paper is organized as follows: In Section 2, we present and discuss some recently proposed modeling and simulation methods for HCI, including numerical methods [26,27,33], an analytical HCI model in digital circuit [3,28,63], trap-based HCI models [29][30][31] and an ANN model for HCI reliability [33]. In Section 3, a conclusion and outlook are given.…”