An Arsenic Emitter Structure for High-Performance Silicon Transistors

Current Gain Mechanism in Arsenic Emitter Transistors

“…[1], ps is the sheet resistivity, q is the electron charge, and ~x is the electron mobility at the depth x. The computer program simply performs the calculation d (ps-D --N~ ~x q [i1 dx to find the concentration Nz at the depth x.…”

“…In Eq. [1], ps is the sheet resistivity, q is the electron charge, and ~x is the electron mobility at the depth x. The mobility values used were from the compilation by Irvin (4).…”

“…The use of arsenic as an emitter dopant in bipolar transistors has received considerable attention during the past year (1)(2)(3). The primary advantages of arsenic over phosphorus for emitter diffusions are the steeper doping gradient at the emitter-base junction and the absence of the "push ahead" or "emitter dip" effect.…”

“…Ghosh et al (1) have demonstrated that the emitter efficiency is higher when arsenic is used as the emitter dopant. Ghosh et al (1) have demonstrated that the emitter efficiency is higher when arsenic is used as the emitter dopant.…”

“…In the previous work, the limiting gain mechanism in an arsenic emitter bipolar transistor has been assumed to be emitter efficiency. Ghosh et al (1) have demonstrated that the emitter efficiency is higher when arsenic is used as the emitter dopant. This paper will present data showing that the limiting gain mechanism in arsenic emitter structures is base region recombination, whereas for phosphorus emitter devices, emitter injection efficiency limits the gain.…”