An Area-Efficient and Tunable Bandwidth- Extension Technique for a Wideband CMOS Amplifier Handling 50+ Gb/s Signaling

Chen, Yong; Mak, Pui-In; Yu, Haohong; Boon, Chirn Chye; Martins, Rui P.

doi:10.1109/tmtt.2017.2720600

Cited by 28 publications

(11 citation statements)

References 27 publications

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“…The IRN is found to be 4.26 nV/ √ Hz when the overall gain is equal to 30 dB at V ctrl = 250mV . The linearity of the AGC amplifier under different gain settings is studied by using pseudo-random binary sequence (PRBS) input in the time domain [18], as shown in Fig. 8.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…Non-linearity and saturation must be minimized in order to fulfill the purpose of an AGC amplifier. The BW is another challenge of the PAs since any BW limitation brings inter-symbol interference and data-dependent jitter [17], [18]. A driver is built at the end of the AGC amplifier to drive the 50-input impedance of the equipment.…”

Section: Complete Agc Amplifiermentioning

confidence: 99%

“…Two single branches (M 4 -M 7 ) work as level shifters, transferring the exponential relationship from V yx to (V cpn = V cp − V cn ), and then controlling the gain cell. Because all transistors work in the saturation region, we have V cp,cn = 2I 6,7 /K 6,7 + V th6,7 (18) where Since the two branches are identical to each other, it becomes…”

Section: A Vgamentioning

confidence: 99%

See 2 more Smart Citations

A Wideband Inductorless dB-Linear Automatic Gain Control Amplifier Using a Single-Branch Negative Exponential Generator for Wireline Applications

Kong

Chen²,

Boon

et al. 2018

IEEE Trans. Circuits Syst. I

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Section: Simulation Resultsmentioning

confidence: 99%

Section: Complete Agc Amplifiermentioning

confidence: 99%

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A Wideband Inductorless dB-Linear Automatic Gain Control Amplifier Using a Single-Branch Negative Exponential Generator for Wireline Applications

Kong

Chen²,

Boon

et al. 2018

IEEE Trans. Circuits Syst. I

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“…10(b). The measured group delay was fitted to the polynomial function [26], [27]. It exhibits a small ripple of 3.4 ps up to Nyquist frequency.…”

Section: Measurementmentioning

confidence: 99%

Compact and Broadband ESD Protection I/O Pad Using Pad-Stacked Inductor

et al. 2023

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In this paper, a compact and broadband electrostatic discharge (ESD) protection input/output (I/O) pad for high-speed interfaces is designed and miniaturized using a pad-stacked inductor in a 28-nm CMOS technology. A π-diode with a single inductor is adopted to compensate for the parasitic capacitance and extend the bandwidth of ESD-protected I/O pad. To minimize the increase of the chip area by the inductor, the pad-stacked inductor is proposed, where the inductor is placed below I/O pad. The eddy current, then, is induced in the I/O pad by time-varying magnetic field by the inductor, degrading the performance of the inductor, such as the reduced inductance, increased resistance and capacitance. These effects are thoroughly investigated using the developed equivalent circuit model which is also utilized to design the pad-stacked inductor. The compact and broadband π-diode with the reduced eddy current is then designed by the proper selection of the inductor layer and a patterned I/O pad. Measurement of the designed π-diode with the pad-stacked inductor exhibits broadband impedance match and insertion loss, that is, a return loss better than 10 dB up to 26.5 GHz and a 3-dB bandwidth as large as 22.9 GHz. The chip area of the π-diode remains the same as that of the I/O pad thanks to the proposed pad-stacked inductor. Therefore, the designed π-diode can be applied for the compact high-speed I/O interface circuits.INDEX TERMS Broadband, electrostatic discharge, high-speed, input/output pad.

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“…Wideband circuits are promising for multi-standard radios [32]- [33] and high-speed communications [34]. The wideband low-noise amplifier (LNA) is a key building block of wideband receivers dominating their power consumption and sensitivity performance.…”

Section: Introductionmentioning

confidence: 99%

Wideband low noise amplifiers employing noise cancelling technique

Yu¹

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An Area-Efficient and Tunable Bandwidth- Extension Technique for a Wideband CMOS Amplifier Handling 50+ Gb/s Signaling

Cited by 28 publications

References 27 publications

A Wideband Inductorless dB-Linear Automatic Gain Control Amplifier Using a Single-Branch Negative Exponential Generator for Wireline Applications

A Wideband Inductorless dB-Linear Automatic Gain Control Amplifier Using a Single-Branch Negative Exponential Generator for Wireline Applications

Compact and Broadband ESD Protection I/O Pad Using Pad-Stacked Inductor

Wideband low noise amplifiers employing noise cancelling technique

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