An approach to determining an equivalent circuit for HEMTs

Shirakawa, K.; Oikawa, H.; Shimura, T.; Kawasaki, Takeshi; Ōhashi, Y.; Saito, Tamio; Daido, Y.

doi:10.1109/22.372092

Cited by 97 publications

(46 citation statements)

References 9 publications

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“…(12) should be independent of the frequency; in other words, they should exhibit flat functions of the frequency. The variances of the dominant elements are chosen to express one criterion of the objective function [8]. The dominant elements of the pinch-off circuit model are the capacitive elements.…”

Section: Both Inductancesmentioning

confidence: 99%

Novel technique for estimating metal semiconductor field effect transitor parasitics

Khalaf

Riad

2002

Int J RF and Microwave Comp Aid Eng

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A novel technique is developed for extracting the gate resistance, parasitic inductances, and pad capacitances for metal semiconductor field effect transistor devices. The parameters are extracted from two sets of S-parameter measurements: cold measurements and pinch-off measurements. The proposed technique gives rise to reliable results and it is insensitive to the unavoidable measurement errors over any frequency range. The technique is tested on hypothetical data and applied to S-parameter measurements of a few metal semiconductor field effect transistor devices on the same wafer to provide a unique solution.

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Section: Both Inductancesmentioning

confidence: 99%

Novel technique for estimating metal semiconductor field effect transitor parasitics

Khalaf

Riad

2002

Int J RF and Microwave Comp Aid Eng

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“…It is well known that an accurate extraction method for a proper small-signal equivalent circuit is vital for designing a circuit, evaluating the process technology, and optimizing device performance. Several procedures have been proposed [6][7][8][9][10][11] to extract the small signal equivalent circuit parameters of microwave FETs from measured S-parameters. However, due to the high contact resistances in the source and drain region, the standard parameter extraction method for HEMTs cannot be performed directly for GaN-based HEMTs [12].…”

Section: Introductionmentioning

confidence: 99%

A new small-signal modeling and extraction method in AlGaN/GaN HEMTs

Wang

et al. 2008

Solid-State Electronics

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“…Lin and Kompa [3] demonstrated an extraction technique which, by using a bidirectional multiplane search, reduces the dimensions of the optimization problem to improve robustness and efficiency. Shirakawa et al [4] published an extraction technique with some features similar to the method of Lin Fig. 1) while using analytical methods to determine the intrinsic components.…”

Section: Introductionmentioning

confidence: 99%

Performance and limitations of decomposition-based parameter extraction procedures for FET small-signal models

Niekerk

Meyer

1998

IEEE Trans. Microwave Theory Techn.

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A recently proposed optimizer-based parameterextraction technique using adaptive decomposition is subjected to a systematic and rigorous evaluation. The technique is shown to be robust and accurate under varying starting conditions. A study of convergence performance based on decomposition theory and test results is presented. Robustness tests are used to show that commonly used statistical descriptions such as mean and standard deviation are inadequate for presenting these types of test data.

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An approach to determining an equivalent circuit for HEMTs

Cited by 97 publications

References 9 publications

Novel technique for estimating metal semiconductor field effect transitor parasitics

Novel technique for estimating metal semiconductor field effect transitor parasitics

A new small-signal modeling and extraction method in AlGaN/GaN HEMTs

Performance and limitations of decomposition-based parameter extraction procedures for FET small-signal models

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