A new small-signal modeling and extraction method in AlGaN/GaN HEMTs

Lu, Jing; Wang, Yan; Ma, Lei; Zhang, Yu

doi:10.1016/j.sse.2007.07.009

Cited by 90 publications

(66 citation statements)

References 15 publications

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“…In this case, a cold FET simulation [8] has been carried out in order to extract the device's drain-source capacitance and the parasites due to the package, allowing the identification of the device's intrinsic drain (see Fig. 7).…”

Section: Doherty Power Amplifier Designmentioning

confidence: 99%

A 25 W 70% Efficiency Doherty Power Amplifier at 6 dB Output Back-Off for 2.4 GHz Applications with VGS, PEAK Control

2015

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Abstract-This paper shows the design and simulation results of a hybrid Doherty power amplifier. The amplifier has been designed at 2,4 GHz, obtaining power-added efficiency above 70 % for 6 dB output power back-off, together with a small signal gain of 17 dB. Design and analysis equations are presented considering class AB bias conditions for the main amplifier and class C for the peak one in back-off larger than 6 dB, and FET device assumption. An additional control on the bias point of the peak device has been carried out, in order to increase the gain on the Doherty region and ease the design of the peak branch. A Cree's GaN-HEMT CGH40010F device has been used with a nonlinear model guarantied up to 6 GHz and with an expected output power of 10 W. The obtained output power is higher than 25-W. The simulation has been carried out using Agilent ADS CAD tools. The present design could present the state of the art in terms of continuous-wave (CW) characterization.

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Section: Doherty Power Amplifier Designmentioning

confidence: 99%

A 25 W 70% Efficiency Doherty Power Amplifier at 6 dB Output Back-Off for 2.4 GHz Applications with VGS, PEAK Control

2015

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“…Therefore, the presented analysis can be beneficial to the power amplifier designs in the breakdown region. [1,2] In addition, different from the black-box behavioral model, the obtained equivalent circuit model is useful for the optimization of the device design [18][19][20] and helps us understand device physics [21][22][23] under large-signal operation. Besides, the presented inductive breakdown network can be applicable to other transistors in the presence of RF inductive breakdown.…”

Section: Journal Of Electromagnetic Waves and Applications 1871mentioning

confidence: 99%

Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

Lee

Lin

2015

Journal of Electromagnetic Waves and Applications

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In this paper, large-signal output characteristics of the metal-oxide-semiconductor field-effect transistors in the breakdown region are investigated using X-parameter measurements for the first time. Magnitude of X T 2121 coefficients can be larger than the result of X s 2121 coefficients at high input power as drain voltage increases to the breakdown region. The output impedance X z 2121 under large-signal drive incorporating with the X s 2121 and X T 2121 coefficients is derived and then employed to investigate output matching in the breakdown region and at high input power, which is significant for power amplifier designs. Compared with the conventional hot-Z 2121 without X T 2121 coefficients considered, X z 2121 can be more accurate for the output impedance characterization. The presented analysis based on the X-parameters can be beneficial to output matching at high input power for power amplifier designs in the breakdown region.

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“…Jarndal and Kompa [10] have studied the 22-elements distributed topology and extraction method for AlGaN/GaN HEMT, and Lu et al [11] proposed a 20-elements topology and extraction method for AlGaN/GaN HEMT. In this paper, we use a compact model with 19 elements as shown in Fig.…”

Section: Small-signal Equivalent Circuit Modelmentioning

confidence: 99%

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT

Sang¹,

Xu²,

Guo³

et al. 2011

PIER Letters

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Abstract-In this paper, a large signal equivalent circuit empirical model based on Anglov model for ceramic package high power AlGaN/GaN HEMT has been proposed. A temperature-dependent drain current model, including self-heating effect, has been presented, and good agreements are achieved between measurement results and calculated results at different temperatures. The nonlinear capacitance models are modeled directly by measured microwave scattering (S) parameters and multi-bias small signal equivalent circuit model (SSECM) of package device is also established based on the measurements. A power amplifier based on large size AlGaN/GaN HEMT with a total gate periphery of 36 mm has been designed by using the proposed model for validation purpose, and the simulation results fit the measurement results well at different temperatures.

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A new small-signal modeling and extraction method in AlGaN/GaN HEMTs

Cited by 90 publications

References 15 publications

A 25 W 70% Efficiency Doherty Power Amplifier at 6 dB Output Back-Off for 2.4 GHz Applications with VGS, PEAK Control

A 25 W 70% Efficiency Doherty Power Amplifier at 6 dB Output Back-Off for 2.4 GHz Applications with VGS, PEAK Control

Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT

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