An Approach Based on Sensitivity Analysis for the Evaluation of Process Variability in Nanoscale MOSFETs

Bonfiglio, Valentina; Iannaccone, Giuseppe

doi:10.1109/ted.2011.2144985

Cited by 7 publications

(5 citation statements)

References 15 publications

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“…Considering that statistical simulations have been performed on ensembles of N=1000 devices, the mean square relative error on the estimated standard deviation of the threshold voltage is (2N) -0.5 , i.e., 2.2%: all terms lie within or very close to the error bars of statistical simulations. [5] AND WITH STATISTICAL SIMULATION IN [3].…”

Section: Resultsmentioning

confidence: 99%

“…Our method [5] Atomistic Sim. [ As far as the 32 nm MOSFETs are concerned, we assume for LER a Gaussian autocorrelation with mean square amplitude € 3Δ L = 4 nm and correlation length € Λ L = 30 nm as in Ref.…”

Section: Resultsmentioning

confidence: 99%

“…In recent years, simulation studies of variability have typically relied on 3D atomistic statistical simulations, such as [3]. However, here we show that a recently proposed method based on TCADenabled sensitivity analysis [4][5], allows us to accurately compute the standard deviation of electrical quantities -such as the threshold voltage -with a reduction in computational cost of more than two orders of magnitude.…”

Section: Introductionmentioning

confidence: 87%

“…The approach proposed is described in detail in [5]. First, all process and geometry variability causes are expressed in terms of a set of synthetic independent variability sources.…”

Section: Methodsmentioning

confidence: 99%

See 3 more Smart Citations

Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs

Bonfiglio¹,

Iannaccone²

2013

Solid-State Electronics

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 87%

“…The approach proposed is described in detail in [5]. First, all process and geometry variability causes are expressed in terms of a set of synthetic independent variability sources.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs

Bonfiglio¹,

Iannaccone²

2013

Solid-State Electronics

Self Cite

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“…15) New device structures combined with a metal gate, which enables threshold voltage (V th ) adjustment in the undoped channel, make possible the realization of an intrinsic channel in MOSFETs. 16) However, it is difficult to form abrupt source/drain (S/D) junctions in the process because of the unavoidable diffusion of dopants from highly doped S/D regions into the undoped channel region, which is referred to as junction nonabruptness (JNA). The straggle of dopants provides a source of RDD variability in the channel.…”

Section: Introductionmentioning

confidence: 99%

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Kang

Liu

2013

Jpn. J. Appl. Phys.

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Using full three-dimensional (3D) technology computer-aided design (TCAD) simulations, we present a comprehensive statistical study on the random discrete dopant (RDD) induced variability in state-of-the-art intrinsic channel trigate MOSFETs. This paper is focused on the RDD variability sources that are introduced by dopant diffusion from highly doped source/drain (S/D) regions into the undoped channel region, which is referred to as junction nonabruptness (JNA). By considering a realistic lateral doping profile in the channel and evaluating the impact of JNA on the variability of performance parameters such as threshold voltage (V th), subthreshold slope (SS), drain-induced barrier lowering (DIBL), on current (I on), and off current (I off), we show that the effect of JNA can lead to substantial device variations. The nonnegligible influence of JNA puts limitations on device scaling, which is also investigated in this paper.

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Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells

Bonfiglio

Iannaccone

2012

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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An Approach Based on Sensitivity Analysis for the Evaluation of Process Variability in Nanoscale MOSFETs

Cited by 7 publications

References 15 publications

Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs

Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells

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