An antidamping spin–orbit torque originating from the Berry curvature

Kurebayashi, Hidekazu; Sinova, Jairo; Fang, Dong; Irvine, A. C.; Skinner, T. D.; Wunderlich, J.; Novák, V.; Campion, R. P.; Gallagher, B. L.; Vehstedt, E. K.; Zârbo, Liviu P.; Výborný, Karel; Ferguson, A. J.; Jungwirth, T.

doi:10.1038/nnano.2014.15

Cited by 322 publications

(448 citation statements)

References 47 publications

(60 reference statements)

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“…4a with previous measurements in which the in-plane current-induced fields were measured in a bare (Ga,Mn)As epilayer 25 without the Fe film. To observe the corresponding SOT in this sample, a larger concentration of magnetic Mn moments was used, and the measurements were performed at low temperatures where the Mn moments are ferromagnetic in equilibrium.…”

Section: Resultssupporting

confidence: 73%

“…In previous measurements in the bare (Ga,Mn)As epilayer 25 , the antidamping-like SOT was dominated by the counterpart microscopic mechanism to the Dresselhaus ISGE. This Dresselhaus-symmetry antidamping-like SOT is clearly missing in our measured data.…”

Section: Resultsmentioning

confidence: 81%

“…1a). However, when carriers experience both the spin-orbit coupling and magnetic exchange coupling, the inversion asymmetry can generate a non-equilibrium spin density component of extrinsic, scattering-related 22,23 or intrinsic Berrycurvature [24][25][26] origin, which is magnetization dependent and yields an antidamping-like torque BM Â (M Â f). Experiments in (Ga,Mn)As confirmed the presence of the ISGE-based mechanism 8,17,18 and demonstrated that the field-like and the Berry-curvature antidamping-like SOT components can have comparable magnitudes 25 .…”

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confidence: 99%

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Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer

et al. 2015

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Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/ paramagnet interface are a candidate spintronic technology for a new generation of electrically controlled magnetic memory devices. The focus of our work is to experimentally disentangle the perceived two model physical mechanisms of the relativistic spin torques, one driven by the spin-Hall effect and the other one by the inverse spin-galvanic effect. Here, we show a vector analysis of the torques in a prepared epitaxial transition-metal ferromagnet/ semiconductor-paramagnet single-crystal structure by means of the all-electrical ferromagnetic resonance technique. By choice of our structure in which the semiconductor paramagnet has a Dresselhaus crystal inversion asymmetry, the system is favourable for separating the torques due to the inverse spin-galvanic effect and spin-Hall effect mechanisms into the field-like and antidamping-like components, respectively. Since they contribute to distinct symmetry torque components, the two microscopic mechanisms do not compete but complement each other in our system.

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Section: Resultssupporting

confidence: 73%

Section: Resultsmentioning

confidence: 81%

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confidence: 99%

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Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer

et al. 2015

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“…Upon removing the interfacial Cu layer, we observe that the size of the antidampinglike torque is strongly enhanced and that it correlates with the exchange-bias field associated with the fixed AFM moments at the coupled NiFe/IrMn interface. Our observations point to new physics and functionalities that AFMs can bring to the currently highly active research area of relativistic spin-orbit torques induced by in-plane currents in inversion asymmetric magnetic structures [20][21][22][23][24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 79%

Electrical manipulation of ferromagnetic NiFe by antiferromagnetic IrMn

et al. 2015

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We demonstrate that an antiferromagnet can be employed for a highly efficient electrical manipulation of a ferromagnet. In our study, we use an electrical detection technique of the ferromagnetic resonance driven by an in-plane ac current in a NiFe/IrMn bilayer. At room temperature, we observe antidampinglike spin torque acting on the NiFe ferromagnet, generated by an in-plane current driven through the IrMn antiferromagnet. A large enhancement of the torque, characterized by an effective spin-Hall angle exceeding most heavy transition metals, correlates with the presence of the exchange-bias field at the NiFe/IrMn interface. It highlights that, in addition to the strong spin-orbit coupling, the antiferromagnetic order in IrMn governs the observed phenomenon.

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“…Important examples of the SOC effects include current-driven spin-orbit torques [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21], charge-pumping via magnetization precession [8,[22][23][24][25][26], and the formation of topologically nontrivial skyrmion textures [27][28][29][30][31][32][33][34][35][36][37][38] and chiral domain walls [15,16,[39][40][41], as well as the multiferroic behaviour of chiral magnets [42,43] and the ferroelectricity of magnetic textures [41,44].…”

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confidence: 99%

New Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry

Hals

Everschor-Sitte

2017

Phys. Rev. Lett.

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A full description of a magnetic sample includes a correct treatment of the boundary conditions (BCs). This is in particular important in thin film systems, where even bulk properties might be modified by the properties of the boundary of the sample. We study generic ferromagnets with broken spatial inversion symmetry and derive the general micromagnetic BCs of a system with Dzyaloshinskii-Moriya interaction (DMI). We demonstrate that the BCs require the full tensorial structure of the third-rank DMI tensor and not just the antisymmetric part, which is usually taken into account. Specifically, we study systems with C∞v symmetry and explore the consequences of the DMI. Interestingly, we find that the DMI already in the simplest case of a ferromagnetic thinfilm leads to a purely boundary-driven magnetic twist state at the edges of the sample. The twist state represents a new type of DMI-induced spin structure, which is completely independent of the internal DMI field. We estimate the size of the texture-induced magnetoresistance effect being in the range of that of domain walls.Over the past few years, there has been an increasing interest in magnets where interface-induced phenomena play a major role [1][2][3]. This includes the topics of magnetic heterostructures as well as thin films, where the main effects arise from the sample's boundary. Therefore, a rigorous understanding of the physical boundary conditions (BCs) is needed.The strong spin-orbit coupling (SOC) and broken spatial inversion symmetry of these nanostructures lead to an intricate interplay between spin, charge, and orbital degrees of freedom, which affect the magnetic equilibrium state as well as the current-driven spin phenomena. Important examples of the SOC effects include current-driven spin-orbit torques [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21], charge-pumping via magnetization precession [8,[22][23][24][25][26], and the formation of topologically nontrivial skyrmion textures [27][28][29][30][31][32][33][34][35][36][37][38] and chiral domain walls [15,16,[39][40][41], as well as the multiferroic behaviour of chiral magnets [42,43] and the ferroelectricity of magnetic textures [41,44].The underlying mechanism being responsible for chiral skyrmions and domain walls is the Dzyaloshinskii-Moriya interaction (DMI) [45,46]. The DMI is a relativistic magnetic exchange interaction that originates from broken spatial inversion symmetry. Phenomenologically, the DMI is modeled by a free-energy density term, which is linear in the spatial variations of the magnetization. In its most general form, the term can be written asas discussed for example explicitly in Landau & Lifshitz, Ref.[47].Here, m is a unit vector pointing along the magnetization M = M s m, and D ijk is the DMI tensor, which is linear in the relativistic interactions. The particular form of the DMI tensor is determined by the point group of the system. Here, and in what follows, we use the convention of a summation of repeated indices. To avoid confusion with the...

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An antidamping spin–orbit torque originating from the Berry curvature

Cited by 322 publications

References 47 publications

Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer

Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer

Electrical manipulation of ferromagnetic NiFe by antiferromagnetic IrMn

New Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry

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