Electrical manipulation of ferromagnetic NiFe by antiferromagnetic IrMn

Tshitoyan, Vahe; Ciccarelli, Chiara; Mihai, Andrei; Ali, M.; Irvine, A. C.; Moore, T. A.; Jungwirth, T.; Ferguson, A. J.

doi:10.1103/physrevb.92.214406

Cited by 118 publications

(101 citation statements)

References 53 publications

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“…This has been predicted theoretically [32][33][34] and experimentally observed [32,[35][36][37]. It was also recently demonstrated that both collinear [38] and non-collinear AFMs [33,[39][40][41][42] can generate a large SOT on FMs in AFM/FM heterostructures. While the origin of such a torque is not clear [41] it is known that in heavy metal/FM heterostructures, the SHE plays an important role [43,44].…”

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confidence: 84%

“…In particular, since these spin currents are odd under time-reversal, the spin currents in magnetic domains with opposite magnetic moments will be precisely opposite and thus the odd spin currents will tend to cancel out in samples with many magnetic domains. Recently several experiments have demonstrated a SOT in FM/Mn 3 Ir heterostructures [33,39,41,42]. While the origin of this torque is still discussed, it is generally assumed to be at least partly generated by the SHE.…”

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confidence: 99%

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Spin-Polarized Current in Noncollinear Antiferromagnets

et al. 2017

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Noncollinear antiferromagnets, such as Mn3Sn and Mn3Ir, were recently shown to be analogous to ferromagnets in that they have a large anomalous Hall effect. Here we show that these materials are similar to ferromagnets in another aspect: the charge current in these materials is spin-polarized. In addition, we show that the same mechanism that leads to the spin-polarized current also leads to a transversal spin current, which has a distinct symmetry and origin from the conventional spin Hall effect. We illustrate the existence of the spin-polarized current and the transversal spin current by performing ab initio microscopic calculations and by analyzing the symmetry. Based on the spinpolarized current we propose an antiferromagnetic tunneling junction, analogous in functionality to the magnetic tunneling junction.Introduction. Spintronics is a field that studies phenomena in which both spin and charge degree of electron play an important role. Many of the key spintronics effects are based upon the existence of spin currents. Two main types of spin currents are utilized: the spin-polarized currents in ferromagnets (FMs) and the spin currents due to the spin Hall effect (SHE) which are transveral to the charge current and appear even in non-magnetic materials. The most important effects that originate from the spin-polarized currents in FMs are the giant and the tunneling magnetoresistance effects (GMR and TMR) [1][2][3] and the spin-transfer torque (STT) [4,5]. These effects are utilized in magnetic tunneling junctions (MTJs), which form the basic building block of a new type of solid state memory, the magnetic random access memory (MRAM) [6]. This memory is non-volatite and has speed and density comparable to the widely used dynamic random access memory. The SHE on the other hand is responsible (though other effects can contribute) for the spin-orbit torque (SOT) [7,8] in multilayer heterostructures, which can be used for efficient and fast switching of FM layers. The SOT is now also being explored for use in MRAMs [9,10].While spintronics has traditionally focused on FM and non-magnetic materials, in the past few years also antiferromagnetic (AFM) materials have attracted a considerable interest. AFMs offer some unique advantages compared to FMs, but are much less explored (see reviews [11][12][13]). AFMs have a very fast dynamics, which allows for switching on ps timescale [14][15][16]. Furthermore, there exists a wide range of AFM materials, including many insulators and semiconductors, multiferroics [17] and superconductors [18]. Utilizing (and also studying) AFMs is difficult, largely because the magnetic order in AFMs is hard to detect and to manipulate. Recently, electrical detection [19][20][21][22][23] and manipulation of the AFM order has been demonstrated [23,24], however, both detection and manipulation still remain challenging from a practical point of view.

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confidence: 84%

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confidence: 99%

Spin-Polarized Current in Noncollinear Antiferromagnets

et al. 2017

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“…This is because spin currents carried by magnons decay more slowly than those carried by electrons. Note that the initial amplitude of the spin-angular momentum transfer contribution mediated by magnons through ferromagnetic/ antiferromagnetic metallic interfaces is directly related to the interfacial exchange-coupling amplitude, as demonstrated by Tshitoyan et al (2015). Using spin pumping and measuring the inverse spin Hall effect in NiFe/FeMn/W trilayers, Saglam et al (2016) managed to disentangle electronic-and magnonic-transport-related penetration lengths in FeMn (see also Table V).…”

Section: Spin Penetration Depths and Relaxation Mechanismsmentioning

confidence: 99%

Antiferromagnetic spintronics

et al. 2018

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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

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“…38 It has been experimentally demonstrated that antiferromagnets with strong spin-orbit coupling can also act as efficient SHE spin injectors. Measurements showing electrical reorientation of a ferromagnet by the SHE induced in an adjacent antiferromagnet 59,60 highlight that antiferromagnetic spintronics aims not only at replacing ferromagnets but also at assisting ferromagnets in their performance in spintronic devices. We also note that, according to recent theory predictions, 61 even insulating antiferromagnets can act as efficient spin-current sources via the antiferromagnetic resonance spin pumping.…”

Section: Generation Detection and Transmission Of Spin-currents In mentioning

confidence: 99%

“…In previous sections we already mentioned examples of metal antiferromagnets which have so far driven much of the research in antiferromagnetic spintronics. Alloys of Ir and Mn are a prime example of metal antiferromagnets gradually progressing from favorable passive exchange-bias materials to active electrodes in TAMR devices, 8,16,17,19 to SHE injectors of spin current controlling adjacent ferromagnets, 59,60 or to sensitive spin detectors.…”

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Antiferromagnetic spintronics

et al. 2016

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Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on the outside. It also implies that if information was stored in antiferromagnetic moments it would be insensitive to disturbing external magnetic fields, and the antiferromagnetic element would not affect magnetically its neighbors no matter how densely the elements were arranged in a device. The intrinsic high frequencies of antiferromagnetic dynamics represent another property that makes antiferromagnets distinct from ferromagnets. The outstanding question is how to efficiently manipulate and detect the magnetic state of an antiferromagnet. In this article we give an overview of recent works addressing this question. We also review studies looking at merits of antiferromagnetic spintronics from a more general perspective of spin-ransport, magnetization dynamics, and materials research, and give a brief outlook of future research and applications of antiferromagnetic spintronics.Interesting and useless -this was the common perception of antiferromagnets expressed quite explicitly, for example, in the 1970 Nobel lecture of Louis Néel.1 Connecting to this traditional notion we can define antiferromagnetic spintronics as a field that makes antiferromagnets useful and spintronics more interesting. Below we give an overview of this emerging field whose aim is to complement or replace ferromagnets in active components of spintronic devices.We recall some key physics roots of the field and first concepts of spintronic devices based on antiferromagnetic counterparts of the non-relativistic giantmagnetoresistance and spin-transfer-torque phenomena. 2We then focus on electrical reading and writing of information, combined with robust storage, that can be realized in antiferromagnetic memories via relativistic magnetoresistance and spin torque effects.3,4 Related to these topics is the research of spintronic devices in which antiferromagnets act as efficient generators, detectors, and transmitters of spin currents. This will lead us to studies exploring fast dynamics in antiferromagnets 5 and different types of antiferromagnetic materials. They range from insulators to superconductors. Here we comment also on the relation between crystal antiferromagents and synthetic antiferromagnets, with the latter ones playing an important role in spintronic sensor and memory devices.6 In concluding remarks we outline some of the envisaged future directions of research and potential applications of antiferromagnetic spintronics. Equilibrium properties and magnetic storage in antiferromagnetsThe understanding of equilibrium properties of ferromagnets has been guided by the notion of a global molecular field, introduced by Pierre Weiss.1 The theory starts from the Curie law for paramagnets with the inverse susceptibility proportional to temperature, χ −1 ∼ T . It further assumes that the externally ap...

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Electrical manipulation of ferromagnetic NiFe by antiferromagnetic IrMn

Cited by 118 publications

References 53 publications

Spin-Polarized Current in Noncollinear Antiferromagnets

Spin-Polarized Current in Noncollinear Antiferromagnets

Antiferromagnetic spintronics

Antiferromagnetic spintronics

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