An analytical model for transfer characteristics and sub-threshold swings in double-gate tunnel FETs

Gholizadeh, Mahdi; Hosseini, Seyed Ebrahim

doi:10.1109/iraniancee.2014.6999501

Cited by 3 publications

(2 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The tunneling of charge carriers occur at the region of high electric field near the source-channel interface created by applying positive gate voltage [23,24]. So the electric field along x-axis is crucial for the calculation of the tunneling volume and can be determined by differentiating the surface potential.…”

Section: Electrostatic Analysismentioning

confidence: 99%

Impact of technology scaling on analog and RF performance of SOI–TFET

Kumari

Dash

Mishra

2015

Adv. Nat. Sci: Nanosci. Nanotechnol.

View full text Add to dashboard Cite

This paper presents both the analytical and simulation study of analog and RF performance for single gate semiconductor on insulator tunnel field effect transistor in an extensive manner. Here 2D drain current model has been developed using initial and final tunneling length of band-toband process. The investigation is further extended to the quantitative and comprehensive analysis of analog parameters such as surface potential, electric field, tunneling path, and transfer characteristics of the device. The impact of scaling of gate oxide thickness and silicon body thickness on the electrostatic and RF performance of the device is discussed. The analytical model results are validated with TCAD sentaurus device simulation results.

show abstract

Section: Electrostatic Analysismentioning

confidence: 99%

Impact of technology scaling on analog and RF performance of SOI–TFET

Kumari

Dash

Mishra

2015

Adv. Nat. Sci: Nanosci. Nanotechnol.

View full text Add to dashboard Cite

show abstract

“…In their calculations, the influences of the mobile charges on the potential profile and the drain bias on the current are considered. The model also predicts the impacts of structural parameters which is useful to provide a design insight [28]. An enhanced potential model for DG n-Tunnel-FETs was developed by Graef et al It is based on three separated potential solutions.…”

Section: G Electron-hole Bilayer Tfet [Ehbtfet]mentioning

confidence: 99%

A tunneling FET exploiting in various structures and different models: A review

Usha

Vimala

2015

2015 International Conference on Innovations in Information, Embedded and Communication Systems (ICIIECS)

View full text Add to dashboard Cite

A great obstacle for ultra low MOSFETs functioning at very low voltages is there physical limit of the inversion subthreshold swing of 60mv/dec at 300K. Quantum mechanical tunneling of carriers from the source into the channel in Tunnel FETs (TFETs) overcomes in principle this hurdle. The rapid forthcoming of research regarding the TFET leads to a wide range of studied device geometries, different heterostructure combinations and applied technological methods. In this review paper, we discuss about the working principle of TFETs and we focus on various structures and different analytical models available for TFETs.

show abstract

An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes

Ranjith

Komaragiri

2021

J Comput Electron

View full text Add to dashboard Cite

An analytical model for transfer characteristics and sub-threshold swings in double-gate tunnel FETs

Cited by 3 publications

References 19 publications

Impact of technology scaling on analog and RF performance of SOI–TFET

Impact of technology scaling on analog and RF performance of SOI–TFET

A tunneling FET exploiting in various structures and different models: A review

An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes

Contact Info

Product

Resources

About