An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes

Ranjith, R.; Komaragiri, Rama

doi:10.1007/s10825-021-01683-x

Cited by 3 publications

(1 citation statement)

References 31 publications

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“…Equation 29 cannot be computed analytically; therefore, several methods have been proposed in the literature for approximating this integral, in which accuracy is a challenge. The integral solution method in these papers (21,22) is based on the exponential dependence of the 𝐺 𝐵𝑇𝐵𝑇 on the electric field and considering the average electric field (𝐸 𝑎𝑣𝑔 ) in the minimum tunneling length (𝑙 𝑡𝑢𝑛 𝑚𝑖𝑛 ). In this paper, to calculate this integral, the tangent line approximation method is used (9-11).…”

Section: Analutical Model For the Drain Currentmentioning

confidence: 99%

Accurate Analytical Modeling of Drain Current of Heterojunction Tunneling Field Effect Transistor

Peyravi,

Hosseini

2024

IJE

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An accurate analytical model is presented for drain current of the heterojunction tunneling field effect transistor, taking into account the source depletion region, mobile charges and the effect of the drain voltage. This model accurately predicts the potential distribution not only on the surface but also within the semiconductor depth by utilizing newly formulated mathematical relationships. Using the tangent line approximation method and considering the channel region as well as the source depletion region' We analytically calculate the band-to-band tunneling current from the source to the channel by integrating the tunneling generation rate. Compared to simulation results, the proposed model demonstrates significant accuracy in predicting drain current.

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Section: Analutical Model For the Drain Currentmentioning

confidence: 99%