An analytical model for evaluating the influence of device parasitics on Cdv/dt induced false turn-on in SiC MOSFETs

Khanna, Raghav; Amrhein, Andrew; Stanchina, W.E.; Reed, Gregory F.; Mao, Zhi-Hong

doi:10.1109/apec.2013.6520259

Cited by 42 publications

(17 citation statements)

References 9 publications

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“…This large di/dt interacts with any parasitic inductances in the MOSFET bridge components and circuit layout to generate a large dv/dt. By eliminating the large reverse recovery current spike of the lower (synchronous) MOSFET, a softer, more controlled switch node voltage turn-on is allowed [14].…”

Section: Pinch-off Mosfet Design Considerationsmentioning

confidence: 99%

Reducing Switching Losses in BLDC Motor Drives by Reducing Body Diode Conduction of MOSFETs

Brown

Sarlioglu

2015

IEEE Trans. on Ind. Applicat.

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This paper presents a new power electronic topology that aims to reduce switching losses in hard switched inverters for brushless DC motor drive. This is achieved by extending the benefits of synchronous rectification used in lowvoltage switch-mode dc/dc conversion to high-voltage motor drive applications, and by minimizing the reverse conduction behavior of the intrinsic body diode of the synchronous rectifier MOSFET. The proposed topology for reducing body diode conduction includes the addition of a MOSFET in series with the rectifying switch and a SiC Schottky diode around the series switch combination. The paper focuses on theory, simulations, and experimental results, and validates the benefits of proposed new topology for brushless dc motor drive applications. An extension of this topology for sinusoidal backemf permanent magnet motors is also presented. I.0093-9994 (c)

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Section: Pinch-off Mosfet Design Considerationsmentioning

confidence: 99%

Reducing Switching Losses in BLDC Motor Drives by Reducing Body Diode Conduction of MOSFETs

Brown

Sarlioglu

2015

IEEE Trans. on Ind. Applicat.

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“…Furthermore, it is noted that SiC MOSFET gate drive must be bipolar in order to achieve optimum performance [7][8][9][10]15], with careful design to prevent over-or under-voltage on the gate [15] and to reduce parasitic-induced oscillations [9]. Destruction as a result of unwanted device turn-on is of far greater risk in SiC MOSFETs compared with Si MOSFETs [15,16], while gate oxide reliability has been a challenge to SiC [17,18] with some improvement in gate oxide tolerance to temperature more recently [7].…”

Section: Introductionmentioning

confidence: 99%

LV Converters: Improving Efficiency and EMI Using Si MOSFET MMC and Experimentally Exploring Slowed Switching

Roscoe

Holliday

McNeill

et al. 2018

IEEE J. Emerg. Sel. Topics Power Electron.

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Abstract-Widespread adoption of electric vehicles will require AC power distribution systems to accommodate high penetrations of power electronic loads, placing increasing demands on the power quality of gridconnected converters. Recent developments in devices and circuit topologies have potential to improve the intrinsic power quality of these grid interface inverters, reducing the need for passive filters and associated reactive power consumption. Wide bandgap devices, such as SiC, have recently gained much attention due to their low switching losses facilitating raised PWM frequencies. However the high cost of SiC together with electromagnetic interference (EMI) resulting from very rapid switching transitions necessary to realize low switching losses cause concern. Previous research in Si MOSFET modular multilevel converters (MMC) suggests a high efficiency alternative with potential for lower EMI. Si MOSFET MMC benefits are enhanced with parallel-connected devices and slowed switching, made possible by low effective switching frequency. This paper uses experimental results to explore the impact of parallel connection and slowed switching on Si MOSFET MMC losses, and presents improved Si MOSFET switching loss models to resolve inaccuracies observed with conventional Si MOSFET models. EMI is then compared between SiC and Si MMC using carefully controlled relative measurements of radiated EMI.

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“…The high-speed switching of SiC MOSFET leads to a sideeffect of increasing electromagnetic interface (EMI). Hence, the early studies in SiC MOSFET gate driver mainly focused on these EMI effects [13][14][15][16][17][18][19], for example, the Cdv/dt induced false turn-on in half-bridge configuration [13,14] or presenting certain design consideration and evaluation [15][16][17][18]. However, there were only few studies on the gate driver design of SiC MOSFET in comparison with Si IGBT [19].…”

Section: Introductionmentioning

confidence: 99%

Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules

Yin

Tseng

Simanjorang³

et al. 2017

IET Power Electronics

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Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) is regarded as an attractive replacement for Si insulated gate bipolar transistor (IGBT) in high-power density applications due to its high switching speed and low switching loss. However, to fully utilise these benefits, the gate driver of the SiC MOSFET needs to be optimised to meet its special driving requirements. Fundamentally, both gate drivers for Si IGBT and SiC MOSFET share similar design methodology since these two power devices have the same MOS-gated structure. However, one of the major challenges in the gate driver design for SiC MOSFET is overcoming the electromagnetic interference, which is resulted from the much higher dv/dt and di/dt ratios during the switching transition. In this study, high-speed gate drivers for Si IGBT and SiC MOSFET power modules of similar ratings of 1.2 kV/120 A have been designed. The performances of gate driver have been experimentally evaluated by a double pulse test. The design considerations of gate driver to enable the replacement of Si IGBT by SiC MOSFET have been conclusively investigated and presented in this study.

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An analytical model for evaluating the influence of device parasitics on Cdv/dt induced false turn-on in SiC MOSFETs

Cited by 42 publications

References 9 publications

Reducing Switching Losses in BLDC Motor Drives by Reducing Body Diode Conduction of MOSFETs

Reducing Switching Losses in BLDC Motor Drives by Reducing Body Diode Conduction of MOSFETs

LV Converters: Improving Efficiency and EMI Using Si MOSFET MMC and Experimentally Exploring Slowed Switching

Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules

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