An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor

Abstract

We extend a recent analysis of gravitational perturbations on Dirac-Goto-Nambutype strings, membranes and higher-dimensional branes. In an arbitrary gauge, it is shown that the relevant first-order equations governing the displacement vector of the worldsheet and metric perturbation are obtainable from a variational principle whose Lagrangian is constructed as a second-order perturbation of the standard Dirac-Goto-Nambu action density. A symplectic current functional is obtained as a by-product that is potentially useful for the derivation of conservation laws in particular circumstances.

Modeling of Floating-Body Effect in Silicon-on-Insulator Metal–Oxide–Silicon Field-Effect Transistor with Complete Surface-Potential-Based Description

“…Usually the kink effect is modeled as a parasitic bipolar junction transistor caused by the impact ionization. 4) However, the real reason of the steep current increase is the potential increase at the source side due to stored holes as schematically shown in Fig. 2.…”